Focal plane readout unit cell background suppression circuit and method
AssigneeRaytheon Company
InventorMiguel E. Levy
Life of this patent
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AssigneeRaytheon Company
InventorMiguel E. Levy
Estimating the term…
A background suppression technique uses well-controlled and repeatable charge skimming operations to increase the charge capacities of the integration capacitors of integrated focal plane readout unit cells. A MOSFET (Q1) is connected to an integration capacitor (C.sub.int) from which the quantity of stored charge is to be reduced. During each photocurrent integration period, the MOSFET is driven with a "skimming pulse" (V.sub.sk) to draw charge from the capacitor. The skimming pulse is substantially shorter than an integration period, reducing the amount of noise contributed by the MOSFET's noise mechanisms, and has an amplitude great enough to drive the MOSFET into its strong inversion mode, making the quantity of the removed charge relatively insensitive to variations in MOSFET threshold voltage. The charge skimming pulse is arranged to reduce the charge on the capacitor almost, but not quite, to zero, so that the entire integration period remains utilized.
A background suppression circuit suitable for use with a focal plane readout unit cell, comprising:
A background suppression circuit suitable for use with an integrated focal plane readout unit cell, comprising:
A focal plane readout unit cell with a background suppression circuit, comprising:
An integrated focal plane array with improved background suppression, comprising:
A method of removing charge from the integrating capacitor of a focal plane readout unit cell to allow said capacitor to accommodate a higher maximum photocurrent, comprising the steps of:
Dependencies are inferred from the claim text.