Process for producing sintered thermoelectric semiconductor and sintered thermoelectric semiconductor
AssigneeAisin Seiki Kabushiki Kaisha
InventorsHitoshi Tauchi, Satoru Hori, Joji Hachisuka, Makoto Yamazaki, Masayoshi Ando
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Abstract
A process for producing a sintered thermoelectric semiconductor includes a first step of forming bulk crystals of a thermoelectric semiconductor and a second step of hot extrusion. The second step includes substeps of placing the bulk crystals in the cavity of a heated extrusion die, pushing the ram into the cavity, thereby compressing and crushing the bulk crystals and turning them into a molten or semi-molten state, and finally extruding the molten or semi-molten crystals, thereby sintering them and forming a sintered thermoelectric semiconductor.
Claims7
A process for producing a sintered thermoelectric semiconductor, said process comprising:
- a first step of forming bulk crystals of thermoelectric semiconductor;
- and
- a second step of hot extrusion which includes substeps of placing said bulk crystals in a cavity of a heated extrusion die, pushing a ram into said cavity, thereby compressing and crushing said bulk crystals and turning them into a molten or semi-molten state, and extruding said molten or semi-molten crystals, thereby sintering said molten or semi-molten crystals and forming a sintered thermoelectric semiconductor.
A sintered thermoelectric semiconductor which comprises a sintered body formed from a bulk crystal of thermoelectric semiconductor by hot extrusion in which the bulk crystals are crushed, turned into a molten or semi-molten state, and sintered.
Dependencies are inferred from the claim text.