US 6,147,014 AGranted

Forming of deuterium containing nitride spacers and fabrication of semiconductor devices

AssigneeBoard of Trustees of the University of Illinois-Urbana

InventorsJoseph W. Lyding, Karl Hess

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Abstract

Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Claims8

Dependent claims

A method for making a silicon nitride spacer of a semiconductor device, comprising:

fabricating a silicon nitride spacer of a semiconductor device by reacting an ammonia compound with a silane compound, wherein at least one of said compounds contains deuterium, so as to form a silicon nitride spacer containing deuterium.

Dependencies are inferred from the claim text.

Facts

Application: 09/020,565Filed 16 Jan 1998 · continuation
Priority: 16 Jan 1997
Granted: 14 Nov 2000
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 64/01338
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the conductor
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane
H10D 64/693
Characterised by the insulator, e.g. by the gate insulator: the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Family

PCTUS9700629Parent of this continuation · filed 16 Jan 1997
Serial856,411Parent of this continuation · filed 14 May 1997
US 5,872,387 AParent of this continuation
US 6,147,014 AThis patent

From the US filing history. Foreign family members aren’t listed.

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