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AssigneeLSI Logic Corporation
InventorsValeriy Sukharev, Wei-Jen Hsia
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A process for forming low k silicon oxide dielectric material having a dielectric constant no greater than 3.0, while suppressing pressure spikes during the formation of the low k silicon oxide dielectric material comprises reacting an organo-silane and hydrogen peroxide in a reactor chamber containing a silicon substrate while maintaining an electrical bias on the substrate. In a preferred embodiment the reactants are flowed into the reactor at a reactant flow ratio of organo-silane reactant to hydrogen peroxide reactant of not more than 10.6 sccm of organo-silane reactant per 0.1 grams/minute of hydrogen peroxide reactant; and the substrate is biased with either a positive DC bias potential, with respect to the grounded reactor chamber walls, of about +50 to +300 volts, or a low frequency AC bias potential ranging from a minimum of +50/-50 volts up to a maximum of about +300/-300 volts.
A process for making low k silicon oxide dielectric material having a dielectric constant greater than 3.0 while suppressing pressure spikes during the formation of the low k silicon oxide dielectric material which comprises reacting an organo-silane and hydrogen peroxide in a reactor chamber containing a substrate support with a silicon substrate thereon while maintaining an electrical bias potential on said substrate support to thereby form low k silicon oxide dielectric material having a dielectric constant no greater than 3.0 while suppressing pressure spikes.
A process for making low k silicon oxide dielectric material having a dielectric constant no greater than 3.0 which comprises reacting organo-silane and hydrogen peroxide reactants in a reactor chamber containing a substrate support with a silicon substrate thereon at a ratio of organo-silane reactant to hydrogen peroxide reactant which will suppress pressure spikes during the formation of said low k silicon oxide dielectric material, and while maintaining an electrical bias potential on said substrate support to thereby form low k silicon oxide dielectric material having a dielectric constant no greater than 3.0 while suppressing pressure spikes.
A process for making low k silicon oxide dielectric material having a dielectric constant no greater than 3.0 which comprises the steps of:
A process for making low k silicon oxide dielectric material having a dielectric constant no greater than 3.0 which comprises the steps of:
Dependencies are inferred from the claim text.