Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• a) providing a laminated conductive structure on a substrate, the laminated conductive structure including a cap conductive sub-layer made of a material selected from the group consisting of titanium and titanium compound;
• b) forming an insulating layer over the laminated conductive structure;
• c) dry-etching the insulating layer in an ambient including fluorine through a mask pattern to provide a hole therein until the cap conductive sub-layer is exposed;
• d) rinsing the substrate in a liquid made of a material selected from the group consisting of water, alcohol, pyridine, and combinations thereof to remove a fluoride which is formed by the fluorine reacting with a substance included in the laminated conductive structure to thereby suppress a crown;
• and
• e) removing the mask pattern from the substrate in a plasma after said step d).

A method of manufacturing a semiconductor device comprising:

• a) providing a laminated conductive structure on a substrate, the laminated conductive structure including a first conductive sub-layer, a second conductive sub-layer formed on the first conductive sub-layer, and a third conductive sub-layer which is formed on the second conductive sub-layer and is made of a material selected from a group consisting of titanium and titanium compound;
• b) forming an insulating layer over the laminated conductive structure;
• c) etching the insulating layer through a mask pattern to provide a hole therein until the third conductive sub-layer is exposed;
• and
• d) rinsing the substrate with water and thereafter rinsing the substrate with alcohol or pyridine.

A method of manufacturing a semiconductor device comprising:

• a) providing a laminated conductive structure on a substrate, the laminated conductive structure including a first conductive sub-layer, a second conductive sub-layer formed on the first conductive sub-layer, and a third conductive sub-layer which is formed on the second conductive sub-layer and is made of a material selected from a group consisting of titanium and titanium compound;
• b) forming an insulating layer over the laminated conductive structure;
• c) etching the insulating layer through a mask pattern to provide a hole therein until the third conductive sub-layer is exposed;
• d) rinsing the substrate in a liquid made of a material selected from the group consisting of water, alcohol, pyridine, and combinations thereof;
• e) removing the mask pattern from the substrate in a plasma;
• and
• f) washing the substrate with a liquid of organic solvent.

A method of manufacturing a semiconductor device comprising:

• a) providing a laminated conductive structure on a substrate, the laminated conductive structure including a cap conductive sub-layer made of a material selected from the group consisting of titanium and titanium compound;
• b) forming an insulating layer over the laminated conductive structure;
• c) dry-etching the insulating layer in an ambient including fluorine through a mask pattern to provide a hole therein until the cap conductive sub-layer is exposed;
• and
• d) rinsing the substrate with water and thereafter rinsing the substrate with alcohol or pyridine to remove a compound which may be generated by reacting fluorine in the ambient of the dry-etching with a substance included in the laminated conductive structure to thereby suppress a crown.

A method of manufacturing a semiconductor device comprising:

• a) providing a laminated conductive structure on a substrate, the laminated conductive structure including a cap conductive sub-layer made of a material selected from the group consisting of titanium and titanium compound;
• b) forming an insulating layer over the laminated conductive structure;
• c) dry-etching the insulating layer in an ambient including fluorine through a mask pattern to provide a hole therein until the cap conductive sub-layer is exposed;
• d) rinsing the substrate in a liquid made of a material selected from the group consisting of water, alcohol, pyridine, and combinations thereof to remove a compound which may be generated by reacting fluorine in the ambient of the dry-etching with a substance included in the laminated conductive structure to thereby suppress a crown;
• e) removing the mask pattern from the substrate in a plasma;
• and
• f) washing the substrate with a liquid of organic solvent.