Method for forming metal line of semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsDong Man Kang, Jung Ho Kang
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Abstract
A method for forming a metal line of a semiconductor device is suitable for forming a conductive material with strong connection force, by irradiating the region between metals to be connected with each other, with laser beams. It comprises the steps of: forming a plurality of metal lines on a substrate; depositing a first conductive material over the substrate including the metal lines; irradiating the first conductive material between the metal lines to be connected, with laser beams, before forming a second conductive material; and removing the first conductive material excluding the second conductive material.
Claims14
A method for forming a metal line of a semiconductor device, comprising the steps of:
- forming a plurality of metal lines on a wafer, wherein said metal lines are deposited on the same level with respect to the substrate surface;
- depositing a first material which can be silicified, over the wafer including the metal lines, wherein the first material is at least one of a polysilicon layer and an amorphous silicon layer;
- irradiating a portion of the first material where the metal lines are adjacent each other, with laser beams, thereby forming a conductive material to connect the metal lines with each other;
- and
- removing portions of the first material excluding the conductive material, wherein bent portions of the metal lines are opposite to each other to maximize the effect of electrical conductivity therebetween.
A method for forming a metal line of a semiconductor device, comprising the steps of:
- forming a plurality of metal lines on a wafer, wherein said metal lines are deposited on the same level with respect to the substrate surface;
- forming an amorphous silicon layer over the wafer including the metal lines;
- irradiating a portion of the amorphous silicon layer where the metal lines are adjacent each other, with laser beams, thereby forming a silicide layer to connect the metal lines with each other;
- and
- removing the residual amorphous silicon layer, wherein the spot size of the laser beams is adjusted to 2.5.about.6.5 .mu.m (diameter), and the energy there is adjusted to 3.0 .mu.J.
A method for forming a metal line of a semiconductor device, comprising the steps of:
- forming first and second metal lines on a substrate, wherein said first and second metal lines are deposited on the same level with respect to the substrate surface;
- forming a material layer for anti-fuse, over the substrate including the first and second metal lines, wherein the material layer is at least one of a polysilicon layer and an amorphous silicon layer;
- irradiating a portion of the material layer corresponding to the region where the first and second metal lines are adjacent to each other, with laser beams;
- and
- removing the region which is not irradiated with laser beams, from the material layer, wherein the first and second metal lines are bent to be adjacent to each other.
A method for forming a metal line of a semiconductor device, comprising the steps of:
- forming first and second metal lines on a substrate, wherein said first and second metal lines are deposited on the same level with respect to the substrate surface;
- forming a material layer for anti-fuse, over the substrate including the first and second metal lines, wherein the material layer is at least one of a polysilicon layer and an amorphous silicon layer;
- irradiating a portion of the material layer corresponding to the region where the first and second metal lines are adjacent to each other, with laser beams;
- and
- removing the region which is not irradiated with laser beams, from the material layer, wherein the conductive material is a suicide and the area of silicide is less than 4.5.times.4.5 .mu.m.sup.2.
Dependencies are inferred from the claim text.