Vertically integrated semiconductor component and method of producing the same

A method for the manufacture of a semiconductor component comprising the following steps:

• forming a first component comprising a first contact region on an upper surface of a first substrate;
• forming a second component comprising a second contact region on an upper surface of a second substrate, the second substrate comprising a lower surface, the second substrate having a thickness, the second substrate also comprising a via hole extending from the upper surface at least partially through the second substrate towards the lower surface;
• eroding the lower surface of the second substrate to reduce the thickness of the second substrate and so that the via hole extends from the upper surface to the lower surface of the second substrate;
• gluing the upper surface of the first substrate to the lower surface of the second substrate with bisbenzocyclobutene so that the via hole at the lower surface of the second substrate engages the bisbenzocyclobutene;
• removing at least a portion of the bisbenzocyclobutene disposed between the via hole at the lower surface of the second substrate and the first contact region;
• and
• electrically connecting the first contact region to the second contact region with a vertical contact structure that extends from the second contact region, through the via hole and to the first contact region.