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AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, Frederick N. Hause, Charles E. May
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The present invention is directed to a transistor having a stacked silicide metal and method of making same. In general, the method comprises forming a layer of nitrogen-bearing silicon dioxide above the gate conductor and the source and drain regions of a transistor. In one illustrative embodiment, the method further comprises forming a layer of titanium above at least the surface of the gate conductor and the source and drain regions. Thereafter, a layer of cobalt is formed above the layer of titanium. The transistor is then subjected to a heat treating process such that at least the layer of cobalt forms a metal silicide. Also disclosed herein is a partially formed transistor comprised of a gate conductor, a source region and a gate region. In one illustrative embodiment, the transistor is further comprised of a layer of nitrogen-bearing silicon dioxide formed above the gate conductor and the source and drain regions. The transistor further comprises a layer of titanium positioned adjacent the layer of nitrogen-bearing silicon dioxide and a layer of cobalt positioned adjacent the layer of titanium.
A method of forming a metal silicide above a transistor comprised of a gate conductor, a source region and a gate region, the method comprising:
A method of forming a metal silicide above a transistor comprised of a gate conductor, a source region and a gate region, the method comprising:
A method of forming a metal silicide above a transistor comprised of a gate conductor, a source region and a gate region, the method comprising:
A method of forming a metal silicide above a transistor comprised of a gate conductor, a source region and a gate region, the method comprising:
Dependencies are inferred from the claim text.