Method for fabricating semiconductor device
AssigneeNEC Corporation
InventorIchiro Yamamoto
Life of this patent
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Abstract
Ions are implanted into a silicon nitride film at a dose of not more than 1.times.10.sup.15 cm.sup.-2 so that the projected range of the ions is 20 to 60% of the thickness of the silicon nitride film. This enables the stress of the nitride film to be reduced while enjoying good productivity without introduction of defects into a silicon substrate.
Claims22
A method for fabricating a semiconductor device, comprising the steps in sequence of:
- forming a pad oxide film and a silicon nitride film successively on a semiconductor substrate;
- implanting ions having a mass number of at least 14, by means of a beam directed normal to the substrate, into said silicon nitride film;
- selectively removing said silicon nitride film in accordance with a field pattern;
- growing silicon oxide films at positions where said silicon nitride film is removed;
- removing said pad oxide film and said silicon nitride film which is left at the step of selectively removing said silicon nitride film;
- and
- forming a semiconductor device between said silicon oxide films.
A method for fabricating a semiconductor device, comprising the steps in sequence of:
- forming a pad oxide film and a silicon nitride film successively on a semiconductor substrate;
- implanting ions having a mass number of at least 14, by means of a beam directed normal to the substrate, into said silicon nitride film;
- selectively removing said silicon nitride film in accordance with a field pattern;
- forming grooves into said semiconductor substrate at positions where said silicon nitride film is removed;
- filling said grooves and removed portions of said silicon nitride film with silicon oxide films;
- removing said silicon nitride film which is left at the step of selectively removing said silicon nitride film;
- and
- forming a semiconductor device between said silicon oxide films.
A method for fabricating a semiconductor device, comprising the steps of:
- forming a silicon nitride film as one of the components formed on a semiconductor substrate;
- and
- implanting phosphorus ions at a dose of not more than 1.times.10.sup.15 cm.sup.-2, by means of a beam directed normal to the substrate and to the silicon nitride film, directly into said silicon nitride film to a depth of 20% to 60% from a surface of said silicon nitride film.
A method for fabricating a semiconductor device, comprising the steps in sequence of:
- forming a pad oxide film and a silicon nitride film successively on a semiconductor substrate;
- implanting ions uniformly into and across a surface of said silicon nitride film to a depth less than the thickness of said silicon nitride film;
- selectively removing said silicon nitride film in accordance with a field pattern;
- growing silicon oxide films at positions where said silicon nitride film is removed;
- removing said pad oxide film and said silicon nitride film which is left at the step of selectively removing said silicon nitride film;
- and
- forming a semiconductor device between said silicon oxide films.
A method for fabricating a semiconductor device comprising the steps in sequence of:
- forming a pad oxide film and a silicon nitride film successively on a semiconductor substrate;
- implanting ions uniformly into said silicon nitride film to a depth less than the thickness of said silicon nitride film;
- selectively removing said silicon nitride film in accordance with a field pattern;
- forming grooves into said semiconductor substrate at positions where said silicon nitride film is removed;
- filling said grooves and removed portions of said silicon nitride film with silicon oxide films;
- removing said silicon nitride film which is left at the step of selectively removing said silicon nitride film;
- and
- forming a semiconductor device between said silicon oxide films.
A method for fabricating a semiconductor device, comprising the steps in sequence of:
- forming a silicon nitride film which is one of component formed on a semiconductor substrate;
- and
- implanting phosphorus ions uniformly into and across said silicon nitride film to a depth of 20% to 60%.
Dependencies are inferred from the claim text.