Processing methods of forming a capacitor

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location;
• forming electrically conductive material within the capacitor opening and in electrical connection with the node location;
• forming a protuberant structure within the capacitor opening, the protuberant structure having a lateral outer surface at least a portion of which is supported by and extends elevationally below adjacent electrically conductive material;
• forming a first capacitor plate structure within the capacitor opening, at least some of the first capacitor plate structure being supported by the protuberant structure;
• providing a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure;
• the forming of the electrically conductive material comprises forming a layer of conductive material to occupy less than all of the capacitor opening and to leave a void outwardly of the node location, the void being defined at least in part by a laterally outermost conductive material sidewall;
• and
• the forming of the protuberant structure comprises:
• forming insulative material within at least a portion of the void and on at least a portion of the laterally outermost conductive material sidewall;
• and
• removing a portion of said insulative material to a degree sufficient to leave insulative material on the laterally outermost conductive material sidewall.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location;
• forming electrically conductive material within the capacitor opening and in electrical connection with the node location;
• forming a protuberant structure within the capacitor opening, the protuberant structure having a lateral outer surface at least a portion of which is supported by and extends elevationally below adjacent electrically conductive material;
• forming a first capacitor plate structure within the capacitor opening, at least some of the first capacitor plate structure being supported by the protuberant structure;
• providing a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure;
• the forming of the electrically conductive material comprises forming a layer of conductive material to occupy less than all of the capacitor opening and to leave a void outwardly of the node location, the void being defined by a conductive material sidewall;
• and
• the forming of the protuberant structure comprises:
• forming insulative material within at least a portion of the void and over at least a portion of the conductive material sidewall;
• leaving an insulative material spacer over the at least a portion of the conductive material sidewall;
• and
• forming conductive material over the substrate and to a degree sufficient to completely fill any of the remaining void.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location;
• forming electrically conductive material within the capacitor opening and in electrical connection with the node location;
• forming a protuberant structure within the capacitor opening, the protuberant structure having a lateral outer surface at least a portion of which is supported by and extends elevationally below adjacent electrically conductive material;
• forming a first capacitor plate structure within the capacitor opening, at least some of the first capacitor plate structure being supported by the protuberant structure;
• providing a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure;
• the forming of the electrically conductive material comprises forming a layer of conductive material to occupy less than all of the capacitor opening and to leave a void outwardly of the node location;
• and
• the forming of the protuberant structure comprises:
• forming insulative material within at least a portion of the void, the insulative material having a base;
• and
• substantially selectively removing an amount of the electrically conductive material relative to the insulative material sufficient to expose a capacitor opening sidewall surface laterally adjacent the protuberant structure lateral outer surface,
• wherein the forming of the first capacitor plate structure comprises forming at least some of the plate structure over the capacitor opening sidewall surface and the protuberant structure lateral outer surface.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location, the capacitor opening having an inner insulative sidewall surface area;
• forming a column of insulative material within the capacitor opening and spaced from the insulative inner sidewall surface area;
• and
• with the insulative material column in place, depositing a first capacitor plate layer within the capacitor opening and on at least some of the inner insulative sidewall surface area and over at least some of the insulative material column.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location, the capacitor opening having an inner sidewall surface area;
• forming a column of insulative material within the capacitor opening and spaced from the inner sidewall surface area;
• and
• with the insulative material column in place, forming a first capacitor plate structure within the capacitor opening and over at least some of the inner sidewall surface area and at least some of the insulative material column;
• prior to the forming of the column, forming a conductive pocket of material within the capacitor opening, at least one portion of the conductive pocket making electrical connection with the node location and supporting the column of insulative material;
• and
• after the forming of the column, selectively removing conductive material relative to the insulative material column to expose a column surface laterally adjacent the capacitor opening inner sidewall surface area.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location, the capacitor opening having an inner sidewall surface area;
• forming conductive material within the capacitor opening over the inner sidewall surface area and in electrical connection with the node location;
• forming a support structure comprising insulative material within the capacitor opening and laterally spaced from the inner sidewall surface area;
• exposing at least some of the inner sidewall surface area and at least a portion of the support structure;
• and
• forming a first capacitor plate structure within the capacitor opening and over at least some of said exposed inner sidewall surface area and over at least some of said exposed support structure.

A method of forming a capacitor support surface comprising:

• forming a conductive female receptacle within a capacitor opening over a substrate node location;
• forming a male projection of insulative material within the female receptacle;
• and
• removing an amount of conductive female receptacle material sufficient to leave a male insulative material portion outwardly supported by unremoved conductive female receptacle material, and to define a protuberant male insulative material portion extending elevationally outwardly of the unremoved female receptacle material.

A method of forming a capacitor comprising:

• forming a capacitor opening to a substrate node location, the capacitor opening having a sidewall surface area;
• forming conductive material within the capacitor opening, the conductive material being in electrical connection with the substrate node location and having a conductive surface elevationally spaced from the node location;
• forming an insulative support structure within the capacitor opening to extend both elevationally above and below the conductive surface of the conductive material, the support structure being supported by the conductive material relative to and in a spaced apart relationship with the capacitor opening sidewall surface area;
• forming a first capacitor plate structure within the capacitor opening and over the insulative support structure;
• and
• forming a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure and over at least a portion of the insulative support structure.

A method of forming a capacitor comprising:

• forming a capacitor opening to a substrate node location, the capacitor opening having a sidewall surface area;
• forming conductive material within the capacitor opening the conductive material being in electrical connection with the substrate node location and having a conductive surface elevationally spaced from the node location;
• forming an insulative support structure within the capacitor opening to extend both elevationally above and below the conductive surface of the conductive material, the support structure being supported by the conductive material relative to and in a spaced apart relationship with the capacitor opening sidewall surface area;
• forming a first capacitor plate structure within the capacitor opening and over the insulative support structure;
• and
• after the forming of the insulative material, selectively etching the conductive material relative to the insulative material.

A method of forming a capacitor comprising:

• forming a capacitor opening to a substrate node location, the capacitor opening having a sidewall surface area;
• forming conductive material within the capacitor opening, the conductive material being in electrical connection with the substrate node location and having a conductive surface elevationally spaced from the node location;
• forming an insulative support structure within the capacitor opening to extend both elevationally above and below the conductive surface of the conductive material, the support structure being supported by the conductive material relative to and in a spaced apart relationship with the capacitor opening sidewall surface area;
• forming a first capacitor plate structure within the capacitor opening and over the insulative support structure;
• the forming of the conductive material comprises forming a conductive layer within the capacitor opening, the layer having at least one sidewall;
• the forming of the insulative support structure comprises:
• forming insulative material adjacent the conductive layer and over the at least one sidewall thereof;
• etching the insulative material to provide a spacer over the at least one sidewall;
• and
• after the etching of the insulative material, selectively etching the conductive layer relative to the insulative material and from adjacent the insulative material.

A method of forming a capacitor comprising:

• supporting an insulative column of material interiorly of a capacitor opening with conductive material which forms an electrical connection with a substrate diffusion region, at least a portion of the insulative column extending a selected distance elevationally below a conductive material upper surface;
• forming a first capacitor plate structure within the capacitor opening and over at least some of the insulative column;
• and
• forming a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure and over at least some of the insulative support column.

A method of forming a capacitor comprising:

• supporting an insulative column of material interiorly of a capacitor opening with conductive material which forms an electrical connection with a substrate diffusion region, at least a portion of the insulative column extending a selected distance elevationally below a conductive material upper surface;
• and
• forming a first capacitor plate structure within the capacitor opening and over at least some of the insulative column;
• and further comprising prior to the supporting of the insulative column:
• forming a conductive material layer within the capacitor opening, the conductive material layer occupying less than the entire capacitor opening;
• forming insulative material within the capacitor opening and over at least some of the conductive material layer;
• and
• selectively etching material of the conductive material layer relative to the insulative material to provide the insulative column and conductive material upper surface.

A method of forming a capacitor comprising:

• supporting an insulative column of material interiorly of a capacitor opening with conductive material which forms an electrical connection with a substrate diffusion region, at least a portion of the insulative column extending a selected distance elevationally below a conductive material upper surface;
• and
• forming a first capacitor plate structure within the capacitor opening and over at least some of the insulative column;
• and further comprising prior to the supporting of the insulative column:
• forming a conductive material layer within the capacitor opening, the conductive material layer occupying less than the entire capacitor opening;
• forming insulative material within the capacitor opening and over at least some of the conductive material layer;
• removing some material of the insulative material layer;
• and
• selectively etching material of the conductive material layer relative to the insulative material to provide the insulative column and conductive material upper surface.

A method of forming a capacitor comprising:

• forming an upright insulative structure internally of a capacitor opening, the insulative structure having a lateral outer sidewall surface elevationally outwardly of an insulative structure bottom portion;
• supporting the insulative structure bottom portion and at least a portion of the lateral outer sidewall surface with conductive material which forms an electrical connection with a substrate node location;
• forming a first capacitor plate structure within the capacitor opening and over the lateral outer sidewall surface which is unsupported with any conductive material;
• and
• forming a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure and over at least some of the insulative structure.

A method of forming a capacitor comprising:

• forming an upright insulative structure internally of a capacitor opening, the insulative structure having a lateral outer sidewall surface elevationally outwardly of an insulative structure bottom portion;
• supporting the insulative structure bottom portion and at least a portion of the lateral outer sidewall surface with conductive material which forms an electrical connection with a substrate node location;
• forming a first capacitor plate structure within the capacitor opening and over the lateral outer sidewall surface which is unsupported with any conductive material;
• and
• the forming of the insulative structure comprises forming an insulative structure interior region which is substantially filled with insulative material.

A method of forming a capacitor comprising:

• forming an upright insulative structure internally of a capacitor opening, the insulative structure having a lateral outer sidewall surface elevationally outwardly of an insulative structure bottom portion;
• supporting the insulative structure bottom portion and at least a portion of the lateral outer sidewall surface with conductive material which forms an electrical connection with a substrate node location;
• forming a first capacitor plate structure within the capacitor opening and over the lateral outer sidewall surface which is unsupported with any conductive material;
• and
• the supporting of the insulative structure comprises:
• prior to forming the insulative structure, forming a layer comprising conductive material within the capacitor opening, the insulative structure being subsequently formed relative to and in contact with the conductive material layer;
• and
• selectively etching the conductive material layer relative to the insulative structure.

A method of forming a capacitor comprising:

• forming an insulative sidewall defining a capacitor opening elevationally over a substrate node location;
• forming an insulative surface inward of the insulative sidewall, the insulative surface having an area;
• supporting at least a portion of the insulative surface area with conductive material which extends between the insulative surface area and the insulative sidewall and which makes electrical connection with the substrate node location;
• forming a first capacitor plate structure within the capacitor opening and over at least some of the insulative surface;
• and
• forming a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure and over at least some of the insulative surface.

A method of forming a capacitor comprising:

• forming a capacitor opening over a node location;
• forming electrically conductive material within the capacitor opening and in electrical connection with the node location, the conductive material having an upper substantially planar surface extending from one side of the capacitor opening to an opposing side of the capacitor opening;
• forming a protuberant structure within the capacitor opening, the protuberant structure having a lateral outer surface at least a portion of which is supported by and extends elevationally below adjacent electrically conductive material;
• forming a first capacitor plate structure within the capacitor opening, at least some of the first capacitor plate structure being supported by the protuberant structure;
• and
• providing a capacitor dielectric layer and second capacitor plate structure operatively adjacent the first capacitor plate structure.