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US 6,146,938 AGranted
Method of fabricating semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShigehiko Saida, Yoshitaka Tsunashima, Tsutomu Sato
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Abstract
A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.
Claims12
A method of fabricating a semiconductor device, comprising the steps of:
- removing an oxide film formed on a surface of a semiconductor substrate;
- doping an impurity into the surface of said semiconductor substrate to form an impurity diffusion layer as a first capacitor electrode;
- forming a capacitor insulating film on said impurity diffusion layer in a condition in which no oxide film grows;
- and
- forming a second capacitor electrode on said capacitor insulating film.
2 more elements
Dependencies are inferred from the claim text.