Integrated circuitry, methods of reducing alpha particle inflicted damage to SRAM cells, methods of forming integrated circuitry, and methods of forming SRAM cells

A method of forming an SRAM cell, comprising:

• forming a second conductivity type diffusion region beneath a first conductivity SRAM cell access device source, wherein the first conductivity type is an opposite conductivity type from the second conductivity type;
• forming an other second conductivity type diffusion region beneath a field oxide;
• and
• not forming a second conductivity type diffusion region beneath a drain of the SRAM cell access device.

A method of forming integrated circuitry comprising:

• providing a silicon-comprising semiconductor substrate;
• defining an SRAM cell pull-down device region of the semiconductor substrate, the pull-down device region comprising a pull-down device source region and a pull-down device drain region wherein the source and drain regions of the pull-down device are of a second conductivity-type;
• defining an SRAM cell access device region of the semiconductor substrate, the access device region comprising an access device source region and an access device drain region wherein the source and drain regions of the access device are of the second conductivity type;
• defining a field oxide isolation region of the semiconductor substrate;
• and
• in a common implant, implanting a conductivity-enhancing dopant of a first conductivity type beneath the field oxide region, beneath the access device source region, and beneath the pull-down device drain region;
• the common implant not implanting the conductivity-enhancing dopant of the first conductivity type beneath at least one of the access device drain region and the pull-down device source region wherein the first conductivity type is an opposite conductivity type from the second conductivity type.