Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact
AssigneeFujitsu Quantum Devices Limited
InventorsMitsuji Nunokawa, Yutaka Sato
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Abstract
A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that prevents a reaction between the Schottky electrode and the diffusion barrier layer such that the metal layer is interposed between the top surface of the Schottky electrode and adhesion layer for increasing the distance between the diffusion barrier layer and the Schottky electrode.
Claims2
A method of fabricating a semiconductor device, comprising the steps of:
- forming an ohmic electrode on a substrate;
- forming a Schottky electrode on said substrate by a lift-off process;
- forming an adhesion layer in electrical contact with said ohmic electrode and said Schottky electrode;
- forming a diffusion barrier layer on said adhesion layer;
- forming a conductor layer on said diffusion barrier layer;
- and
- patterning said conductor layer together with said diffusion barrier layer and said adhesion layer to form a first interconnection pattern on said Schottky electrode and a second interconnection pattern on said ohmic electrode,
- said step of forming said Schottky electrode includes a step of forming a conductive pattern on said Schottky electrode simultaneously to said lift-off process.
Dependencies are inferred from the claim text.