Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
AssigneeSeiko Epson Corporation
InventorsHideto Ishiguro, Takashi Nakazawa
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Abstract
A method for making a highly reliable non-single-crystal silicon thin film transistor, in which an underlying SiO.sub.2 film 15 is formed on a glass substrate 14 and then a polycrystalline silicon layer 17 is formed thereon. After patterning the polycrystalline silicon layer 17, a gate SiO.sub.2 film 18 is formed by an ECR-PECVD process or a TEOS-PECVD process. A gate electrode 19 is formed and source and drain regions 20, 20 are formed by an ion doping process. After forming a SiO.sub.2 insulating interlevel film 21 and providing a contact hole 22, an electrode 23 composed of an Al--Si--Cu film is formed. Finally, it is subjected to wet annealing at a temperature of 350.degree. C. for 3 hours.
Claims29
A method for making a thin film transistor comprising a channel region composed of a non-single-crystal silicon thin film facing a gate electrode with a gate insulating film therebetween, the method comprising:
- providing said gate insulating film including a silicon oxide film;
- and
- wet-annealing said gate insulating film in a moist atmosphere after forming said gate insulating film.
A method for making a thin film transistor, comprising:
- forming a non-single-crystal silicon thin film having source and drain regions and a channel region on a glass substrate;
- forming a gate electrode facing said channel region separated by a gate insulating film composed of a silicon oxide film;
- forming source and drain electrodes connect to said source and drain regions, respectively;
- and
- wet annealing said glass substrate in a moist atmosphere of at least 300.degree. C. for at least one hour.
A method for making a thin film transistor comprising a gate electrode on a substrate, a channel region composed of a non-single-crystal silicon thin film facing said gate electrode and a gate insulating film composed of a silicon oxide film therebetween, comprising:
- inserting said substrate including at least said gate insulating film into a hot wall system;
- and
- wet annealing said substrate in a moist atmosphere.
A thin film transistor, comprising:
- a substrate;
- a channel region composed of a non-single crystal silicon on the substrate;
- a gate electrode facing the channel region;
- and
- a gate insulating film composed of a silicon oxide film between the channel region and the gate electrode, the silicon oxide film being wet annealed in a moist atmosphere at a temperature of at least 300.degree. C. and for a time of at least one hour.
A thin film transistor, comprising:
- a glass substrate;
- a non-single crystal silicon thin film having source regions, drain regions and a channel region on the glass substrate;
- a gate electrode facing the channel region;
- a gate insulating film composed of a silicon oxide film between the channel region and the gate electrode, the silicon oxide film being wet annealed in a moist atmosphere at a temperature of at least 300.degree. C. and for a time of at least one hour;
- a source electrode connected to the source region;
- and
- a drain electrode connected to the drain region.
Dependencies are inferred from the claim text.