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US 6,146,916 AGranted
Method for forming a GaN-based semiconductor light emitting device
AssigneeMurata Manufacturing Co., Ltd.
InventorsYasushi Nanishi, Michio Kadota
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Abstract
A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.
Claims12
A method for forming a GaN-based semiconductor layer, comprising the steps of:
- forming a ZnO buffer layer on a substrate consisting of either glass or silicon;
- and
- epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.
A method for producing a semiconductor light emitting device, comprising the steps of:
- forming a ZnO buffer layer on a substrate consisting of either glass or silicon;
- and
- epitaxially growing a light emitting layer made of a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.
Dependencies are inferred from the claim text.