Method for making enhanced performance field effect devices

Abstract

This invention is predicated on applicant's discovery that near the gate dielectric/semiconductor interface, surface roughness of a particular spectral range plays a disproportionately larger role in scattering electrons and impeding their transport. Moving electrons will not enter the nooks and crannies of roughness having wavelength shorter than about 100 .ANG. and therefore are not affected by them, and electrons are less affected by roughness having wavelengths longer than about 1000 .ANG.. Accordingly, it is desirable to reduce the surface roughness of gate dielectrics at the interface. This can be accomplished prior to dielectric formation by inspection of semiconductor wafers for surface roughness and rejection of those wafers with high surface roughness content in the range 100 .ANG. to 1000 .ANG.. Such inspection also provides a valuable criterion for selecting optimum semiconductor processing steps.

Dependencies are inferred from the claim text.