DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor

A method for manufacturing a capacitor, comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• forming an adhesion layer on said insulating layer;
• forming a lower electrode layer on said adhesion layer;
• forming a ferroelectric layer on said lower electrode layer;
• sequentially forming a first upper electrode layer made of conductive oxide and a second upper electrode layer made of metal by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in said mixture gas and a substrate temperature are definite and a DC input power is changed for said first and second upper electrode layers;
• patterning said first and second upper electrode layers;
• and
• patterning said ferroelectric layer, said lower electrode layer and said adhesion layer, after said first and second upper electrode layers are patterned.

A method for manufacturing a capacitor, comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• perforating a contact hole in said insulating layer;
• burying a conductive plug in said contact hole;
• forming a first lower electrode layer on said insulating layer and said conductive plug;
• forming a second lower electrode layer on said first lower electrode layer;
• forming a ferroelectric layer on said lower electrode layer;
• sequentially forming a first upper electrode layer made of conductive oxide and a second upper electrode layer made of metal by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in said mixture gas and a substrate temperature are definite and a DC input power is changed for said first and second upper electrode layers;
• patterning said first and second upper electrode layers;
• and
• patterning said ferroelectric layer and said first and second lower electrode layers, after said first and second upper electrode layers are patterned.

A method for manufacturing a capacitor, comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• perforating a contact hole in said insulating layer;
• burying a conductive plug in said contact hole;
• sequentially forming a first lower electrode layer made of conductive oxide, a second lower electrode layer made of metal and a third lower electrode layer made of conductive oxide on said insulating layer and said conductive plug by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in said mixture gas and a substrate temperature is definite and a DC input power is changed for said metal and said conductive oxide;
• forming a pyrochlore phase layer on said third lower electrode layer;
• forming a first upper electrode layer made of conductive oxide by a DC magnetron reactive sputtering process on said pyrochlore phase layer;
• performing a heating operation upon said pyrochlore phase layer so that said pyrochlore phase layer becomes a porous perovskite phase ferroelectric layer, after said first upper electrode layer is formed;
• forming a second upper electrode layer made of metal by a DC magnetron reactive sputtering process, after said heating operation is performed;
• patterning said first and second upper electrode layers;
• and
• patterning said ferroelectric layer and said first, second and third lower electrode layers, after said first and second upper electrode layers are patterned.