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US 6,146,765 AGranted
Transparent conductive film and method for its production, and sputtering target
AssigneeAsahi Glass Company, Limited
InventorsAkira Mitsui, Kazuo Sato, Masami Miyazaki, Junichi Ebisawa, Yasuo Hayashi, Masao Higeta, Katsuaki Aikawa, Atsushi Hayashi
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Abstract
A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.
Claims13
A sputtering target comprising
- zinc oxide,
- silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2, and
- gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga.sub.2 O.sub.3.
A method for producing a transparent conductive film, the method comprising
- sputtering a target comprising
- zinc oxide,
- silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2, and
- gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga.sub.2 O.sub.3.
1 more element
A laminate comprising a substrate and a transparent conductive film on the substrate, wherein the transparent conductive film comprises
- zinc oxide,
- silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2, and
- gallium in an amount of from 0.2 to 8.0 mol % in terms of Ga.sub.2 O.sub.3.
Dependencies are inferred from the claim text.