Stable hydride source compositions for manufacture of semiconductor devices and structures
AssigneeAdvanced Technology Materials, Inc.
InventorsMichael A. Todd, Thomas H. Baum, Gautam Bhandari
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AssigneeAdvanced Technology Materials, Inc.
InventorsMichael A. Todd, Thomas H. Baum, Gautam Bhandari
Estimating the term…
A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope, wherein the metal of said metal hydride derivative is selected from the group consisting of:
A metal hydride derivative of the formula MY.sub.n
A metal hydride derivative of the formula:
A metal hydride derivative of the formula:
A deuterated composition selected from the group consisting of deuterated gallium, Ga(.sup.2.sub.1 H).sub.3, deuterated indium, In(.sup.2.sub.1 H).sub.3 or In(.sup.2.sub.1 H).sub.3 .cndot.L, and deuterated aluminum, Al(.sup.2.sub.1 H).sub.3 or Al(.sup.2.sub.1 H).sub.3 .cndot.L, wherein L is a Lewis base.
A metal hydride derivative compound wherein at least one hydrogen atom is replaced by tritium (.sup.3.sub.1 H).
An antimony hydride derivative of the formula:
Dependencies are inferred from the claim text.