US 6,146,505 A · Sputtering method for producing layered aluminium fine particles and use thereof

Abstract

The present invention provides a method for producing layered aluminum fine particles, and applications to single electron tunneling quantum devices, and the present invention further relates to a method for producing spherical metallic aluminum fine particles (layered aluminum fine particles), characterized in that metallic aluminum is supplied into a mixed gas of helium and 1.times.10.sup.-7 to 3.times.10.sup.-7 torr water vapor by sputtering induced by argon gas discharge to generate aggregates, after which this product is released into a vacuum to generate single crystals in which the surface layer is covered with alumina.

Claims4

Dependent claims

A method of producing spherical metallic fine particles of single crystal aluminum having a surface layer of alumina which comprises:

(a) generating aluminum particles from an aluminum target by argon gas discharge-induced sputtering;
(b) introducing said aluminum particles into a mixed gas of water vapor at a pressure of 1.times.10.sup.-7 to 3.times.10.sup.-7 torr, and helium;
and
(c) introducing the particles into a vacuum.

1 more element

Dependencies are inferred from the claim text.

Sputtering method for producing layered aluminium fine particles and use thereof

Life of this patent

Sputtering method for producing layered aluminium fine particles and use thereof

Life of this patent

Abstract

Claims4