Method for laser scanning flip-chip integrated circuits
AssigneeAdvanced Micro Devices, Inc.
InventorsVictoria J. Bruce, Michael R. Bruce
Life of this patent
Estimating the term…
Abstract
Methods for analyzing temperature characteristics of an integrated circuit. In one embodiment, a beam of laser light is directed at the back side of an integrated circuit. The intensity level of laser light reflected from the integrated circuit is measured and compared to a reference intensity level. The magnitude of the difference between the reference intensity level and the intensity level of the reflected laser light is indicative of a temperature characteristic of the integrated circuit.
Claims25
A method for analyzing temperature characteristics of an integrated circuit having internal circuitry in a region opposite a back side, comprising:
- directing a beam of laser light at a back side of the integrated circuit;
- measuring an intensity level of laser light reflected from a target region including the circuitry in the integrated circuit;
- and
- comparing the intensity level with a reference intensity level and, in response, obtaining a temperature characteristic of the integrated circuit.
A method for analyzing temperature characteristics of an integrated circuit, comprising:
- directing laser light at a back side of a first integrated circuit having internal circuitry in a target region opposite the back side;
- establishing a reference intensity level from laser light reflected from the target region including circuitry in the first integrated circuit;
- directing laser light at a back side of a second integrated circuit having internal circuitry in a target region opposite the back side;
- establishing a second intensity level from the laser light reflected from the target region including circuitry in the second integrated circuit;
- and
- comparing the reference intensity level to the second intensity level, whereby a magnitude of difference between the reference and second intensity levels indicates a temperature characteristic for the second integrated circuit relative to the first integrated circuit.
A method for analyzing temperature characteristics of an integrated circuit, comprising:
- (a) scanning a first integrated circuit with a beam of laser light, the first integrated circuit being in a state in which no power is applied;
- (b) measuring a first intensity level of laser light reflected from a target region having circuitry in the first integrated circuit;
- (c) supplying voltage and current to the first integrated circuit;
- (d) running a selected series of test vectors on the first integrated circuit;
- (e) measuring a second intensity level of laser light reflected from the target region having circuitry in the first integrated circuit;
- (f) establishing a delta value of a difference between the first and second intensity levels;
- repeating steps (a)-(f) using a second integrated circuit instead of the first integrated circuit;
- comparing the delta value of the first integrated circuit to the delta value of the second integrated circuit whereby a magnitude of difference between the delta values indicates a temperature characteristic for the second integrated circuit relative to the first integrated circuit.
A method for analyzing circuitry in an integrated circuit device having internal circuitry in a region opposite a back side, the method comprising:
- directing a beam of laser light at a target region including the circuitry via a back side of the integrated circuit device;
- and
- detecting a temperature characteristic of the integrated circuit device as a function of laser light reflected from the target region;
- and
- analyzing the integrated circuit device based upon said temperature characteristic.
A system for analyzing circuitry in an integrated circuit die having internal circuitry in a region opposite a back side, the system comprising:
- means for directing a beam of laser light at a target region including the circuitry via a back side of the integrated circuit;
- means for detecting a temperature characteristic of the integrated circuit as a function of laser light that is reflected from the target region;
- and
- means for analyzing the integrated circuit based upon said temperature characteristic.
A system for analyzing temperature characteristics of an integrated circuit die having internal circuitry in a region opposite a back side, comprising:
- a laser source configured to direct a beam of laser light at a target region including the circuitry via a back side of the integrated circuit;
- a detector arrangement configured to detect a temperature characteristic of the integrated circuit as a function of laser light that is reflected from the target region;
- and
- an analyzer for analyzing the integrated circuit based upon said temperature characteristic.
Dependencies are inferred from the claim text.