Plasma processing apparatus and processing method

A plasma processing apparatus comprising:

• a reaction vessel inside which a substrate to be processed can be housed and the internal pressure of which can be reduced, at least a part of the reaction vessel being formed of a dielectric material;
• a substrate holder for holding the substrate to be processed;
• means for feeding a processing gas to the reaction vessel;
• a plurality of cathode electrodes arranged on the outside of the reaction vessel;
• a high frequency power source, a high frequency power output which is divided and supplied to each of the cathode electrodes;
• a plurality of capacitors each provided between the high frequency power source and one of the cathode electrodes, respectively;
• a first ground shield covering the cathode electrodes and the capacitors;
• a single matching circuit provided between the high frequency power source and the plurality of capacitors;
• and
• a second ground shield covering a transmission path of connecting the matching circuit and the cathode electrodes and covering the first ground shield.

A plasma processing method comprising the steps of:

• providing a plurality of capacitors, wherein each capacitor is provided between a high frequency power source and each of a plurality of cathode electrodes arranged on the outside of a reaction vessel;
• shielding the cathode electrodes and the capacitors with a first ground shield;
• supplying a high frequency power from the high frequency power source to the plurality of cathode electrodes;
• introducing a high frequency from the plurality of cathode electrodes into the reaction vessel to generate plasma in the reaction vessel;
• and
• conducting plasma processing of a substrate to be processed, which is housed in the reaction vessel and which is held by a substrate holder, using the generated plasma.

A plasma processing apparatus comprising:

• a dielectric material surrounding a reaction space;
• a cathode electrode for supplying an electric power to the reaction space;
• a capacitor provided on a transmission path for supplying an electric power supplied from an electric power supplying means to the cathode electrode;
• and
• a first ground shield arranged so as to cover the cathode electrode and the capacitor.

A plasma processing apparatus comprising:

• a dielectric material surrounding a reaction space;
• a plurality of cathode electrodes for supplying an electric power to the reaction space,
• a capacitor provided on a transmission path for supplying an electric power supplied from an electric power supplying means to the cathode electrodes;
• a first ground shield arranged so as to cover the cathode electrodes and the capacitor;
• and
• a second earth shield covering the first earth shield and covering the transmission path connecting the matching circuit and the cathode electrodes.

A plasma processing apparatus comprising:

• a dielectric material surrounding a reaction space;
• a cathode electrode provided outside the dielectric material;
• a capacitor provided on a transmission path for supplying an electric power supplied from an electric power supplying means to the cathode electrode;
• the electric power supplying means supplies a high frequency power from 30 MHz to 600 MHz;
• and a first ground shield is arranged so as to surround the cathode electrode and the capacitor.

A plasma processing apparatus comprising:

• a dielectric material surrounding a reaction space;
• a cathode electrode provided outside the dielectric material;
• a capacitor provided on a transmission path for supplying an electric power supplied from an electric power supplying means to the cathode electrode;
• and
• an electric power supplying means for supplying a high frequency power from 30 MHz to 600 MHZ;
• wherein a first ground shield is arranged so as to surround the cathode electrode and the capacitor;
• and
• a second ground shield covering the first ground shield and covering a transmission path connecting the matching circuit and the cathode electrode.

A plasma processing method comprising the steps of:

• providing a capacitor between a cathode electrode and an electric power supplying means;
• shielding the capacitor and the cathode electrode with a first ground shield;
• supplying an electric power from the electric power supplying means to the cathode electrode;
• introducing the electric power into a reaction space to generate plasma in the reaction space;
• and
• conducting plasma processing of a substrate to be processed in the reaction space by the generated plasma.