Current detecting sensor and method of fabricating the same
AssigneeNEC Corporation
InventorsSoichi Saito, Atsushi Saito
Life of this patent
Estimating the term…
Loading patent…
AssigneeNEC Corporation
InventorsSoichi Saito, Atsushi Saito
Estimating the term…
There is provided a current detecting sensor including (a) an insulating substrate, (b) a first electrode formed on the insulating substrate, the first electrode comprising an electrically conductive electrode and a metal layer formed on the electrically conductive electrode, the metal layer having a smaller area than a area of the electrically conductive electrode, (c) a second electrode formed on the insulating substrate, (d) a third electrode formed on the insulating substrate, (e) an insulating protective film covering the insulating substrate therewith and further covering at least edges of the first, second and third electrodes therewith, the insulating protective film being formed with first, second and third openings at upper surfaces of the first, second and third electrodes, respectively, and (f) an organic film covering the first to third electrodes and the insulating protective film therewith. The current detecting sensor prevents the organic film from being peeled off due to poor coverage over edges of the electrodes, and makes it possible to lengthen a lifetime thereof.
A current detecting sensor comprising:
A current detecting sensor comprising:
A method of fabricating a current detecting sensor, comprising the steps of:
A method of fabricating a current detecting sensor, comprising the steps of:
Dependencies are inferred from the claim text.