Thin film transistor having a vertical structure and a method of manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorYoung-Keun Lee
Life of this patent
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Abstract
Disclosed herein is a thin film transistor for a liquid crystal display device comprising: a substrate; a source(drain) electrode formed on the substrate, with a first width; a semiconductor layer formed on the source(drain) electrode having a second width, the second width being narrower than the first width; an insulating layer formed on the entire surface of the resultant surface structure in which the semiconductor layer is formed, having a contact hole for exposing one portion of the semiconductor layer; the drain(source) electrode formed on a portion of a surface of the insulating layer, filling the contact hole; and a gate electrode formed on the other portion of the insulating layer, separated from the second electrode with a selected distance.
Claims32
A thin film transistor for a liquid crystal display device comprising:
- a substrate;
- a first electrode formed on the substrate, with a first width;
- a semiconductor layer formed on the first electrode having a second width, the second width being narrower than the first width;
- an insulating layer formed on an entire surface of a resultant structure in which the semiconductor layer is formed, the insulating layer having a contact hole for exposing a portion of a surface of the semiconductor layer;
- a second electrode formed on a portion of a surface of the insulating layer, and filling the contact hole;
- and
- a gate electrode formed on another portion of the surface of the insulating layer, and separated from the second electrode with a selected distance.
A liquid crystal display device comprising:
- a substrate;
- a first electrode formed on the substrate, with a first width;
- a semiconductor layer formed on the first electrode having a second width, the second width being narrower than the first width;
- an insulating layer formed on an entire of the surface of a resultant structure in which the semiconductor layer is formed, the insulating layer having a contact hole for exposing a portion of a surface of the semiconductor layer;
- a second electrode formed on a first selected portion of a surface of the insulating layer, and filling the contact hole;
- and
- a pixel electrode formed on a second selected portion of the insulating layer, and extended to a portion of the surface of the second electrode;
- and
- a gate electrode formed on a third selected portion of the surface of the insulating layer, and separated from the pixel electrode with a selected distance.
A method of manufacturing a thin film transistor for a liquid crystal display device comprising the steps of:
- (a) providing a substrate;
- (b) forming a first electrode with a first width on the substrate;
- (c) forming a semiconductor layer on the first electrode with a second width narrower than the first width;
- (d) forming an insulating layer on a surface of a resultant structure in which the semiconductor layer is formed, such that a portion of a surface of the semiconductor layer is exposed to form a contact hole;
- (e) forming a second electrode on a portion of a surface of the insulating layer with the contact hole filled;
- and
- (f) forming a gate electrode on another portion of the surface of the insulating layer such that the gate electrode is separated with a selected distance from the second selected electrode.
A method of manufacturing a liquid crystal display device comprising the steps of:
- (a) providing a substrate;
- (b) forming a first electrode with a first width on the substrate;
- (c) forming a semiconductor layer on the first electrode with a second width narrower than the first width;
- (d) forming an insulating layer with a contact hole on a surface of a resultant structure in which the semiconductor layer is formed such that a portion of a surface of the semiconductor layer is exposed;
- (e) forming a second electrode on a first selected portion of the surface of the insulating layer, and filling the contact hole;
- (f) forming a pixel electrode extending from a second selected portion of the surface of the insulating layer to a portion of a surface of the second electrode;
- and
- (g) forming a gate electrode on a third selected portion of the surface of the insulating layer, the gate electrode being separated from the pixel electrode.
Dependencies are inferred from the claim text.