Semiconductor device and method of fabricating the same
AssigneeNitto Denko Corporation
InventorsShinichi Ohizumi, Yuji Hotta, Seiji Kondo
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Abstract
The present invention is characterized, in a semiconductor device with a semiconductor element sealed by resin, in that a metallic foil is bonded through adhesive to the bottom of a lead frame with the semiconductor element mounted thereon, and another metallic foil is fixed to the outer surface of the sealing resin on the side of the semiconductor element. Such a configuration provides a semiconductor device free from warp. In addition, the effect of no warp and metallic foils on the upper and lower surfaces of the semiconductor device provides a reliable semiconductor device with excellent heat dissipation, less influence from moisture absorption and high thermal stress resistance.
Claims11
A resin sealing semiconductor device with a semiconductor element sealed by a sealing resin, wherein a first metallic foil is bonded through adhesive to a bottom of a lead frame with the semiconductor element mounted thereon, and a second metallic foil is fixed to the outer surface of the sealing resin on the side of the semiconductor element, and wherein the lead frame is made of an iron-nickel alloy, the first metallic foil bonded to the bottom of the lead frame through the adhesive has a linear expansion coefficient of 0.4-2.7.times.10.sup.-5 /.degree. C., and the second metallic foil fixed to the outer surface of the sealing resin on the side of the semiconductor element has a linear expansion coefficient of 0.4-0.8.times.10.sup.-5 /.degree. C. and a thickness of 2-10 times as large as that of the first metallic foil on the bottom of the lead frame.
A resin sealing semiconductor device with a semiconductor element sealed by a sealing resin, wherein a first metallic film is bonded through adhesive to a bottom of a lead frame with the semiconductor element mounted thereon, and a second metallic foil is fixed to the outer surface of the sealing resin on the side of the semiconductor element, and wherein the lead frame is made of a copper alloy, the first metallic foil bonded to the bottom of the lead frame through the adhesive has a linear expansion coefficient of 0.4-1.8.times.10.sup.-5 /.degree. C., and the second metallic foil fixed to the outer surface of the sealing resin on the side of the semiconductor element has a linear expansion coefficient of 1.6-2.7.times.10.sup.-5 /.degree. C. and a thickness of 0.5-3 times as large as that of the first metallic foil on the bottom of the lead frame.
A method for fabricating a semiconductor device comprising the steps of:
- provisionally fixing a first metallic foil on an upper cavity surface of a die through an organic layer previously formed on said first metallic foil;
- mounting a second metallic foil equipped with an adhesive on a lower cavity surface of the die with the adhesive being disposed between the second metallic foil and the die;
- setting a lead frame with a semiconductor element mounted thereon;
- clamping the die to bond the second metallic foil to the lead frame;
- and
- injecting resin into the die and molding it.
A resin sealing semiconductor device with a semiconductor element sealed by a sealing resin, wherein a first metallic foil is bonded through adhesive to a bottom of a lead frame with the semiconductor element mounted thereon, and a second metallic foil is fixed to the outer surface of the sealing resin on the side of the semiconductor element, and wherein the lead frame is made of a 42 alloy, the first metallic foil bonded to the bottom of the lead frame through the adhesive has a linear expansion coefficient of approximately 0.4.times.10.sup.-5 /.degree. C., and the second metallic foil fixed to the outer surface of the sealing resin on the side of the semiconductor element has a linear expansion coefficient of 1.7.times.10.sup.-5 /.degree. C. and a thickness of 2-10 times as large as that of the first metallic foil on the bottom of the lead frame.
Dependencies are inferred from the claim text.