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US 6,144,096 AGranted
Low resistivity semiconductor barrier layers and manufacturing method therefor
AssigneeAdvanced Micro Devices, Inc.
InventorSergey D. Lopatin
Life of this patent
Estimating the term…
Abstract
A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.
Claims14
A semiconductor comprising:
- a semiconductor substrate;
- a dielectric layer formed on a region of said semiconductor substrate;
- an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a conductive area in the semiconductor;
- a barrier layer on said dielectric layer in said opening, including along said walls, and in conductive contact with said conductive area, said barrier layer containing a first metal from Group VIII B combined with a second metal;
- and
- a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
3 more elements
A semiconductor comprising:
- a semiconductor substrate;
- a dielectric layer formed on a region of said semiconductor substrate;
- an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a portion of said region on said semiconductor substrate;
- a barrier layer on said dielectric layer in said opening, including along said walls, said barrier layer containing therefore a first metal selected from a group consisting of cobalt, nickel, palladium and combinations thereof combined with a second metal;
- and
- a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
3 more elements
Dependencies are inferred from the claim text.