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US 6,144,094 AGranted
Semiconductor device including an insulation film and electrode having nitrogen added thereto
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKiyoteru Kobayashi
Life of this patent
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Abstract
A semiconductor device comprising: a silicon substrate having a primary plane; an insulation film formed on the primary plane of the silicon substrate by subjecting the silicon substrate to thermal oxidation in an atmosphere of a gas of N.sub.2 O or a mixing gas of N.sub.2 O and O.sub.2 ; and an electrode formed on the insulation film and having nitrogen and a p-type dopant added therein.
Claims3
A semiconductor device comprising:
- a silicon substrate having a primary plane;
- an insulation film formed on the primary plane of the silicon substrate by subjecting the silicon substrate to thermal oxidation in an atmosphere of a gas of N.sub.2 O or a mixing gas of N.sub.2 O and O.sub.2 ;
- and
- an electrode formed on the insulation film and having nitrogen and a p-type dopant added therein;
- wherein nitrogen is distributed in an interface between the insulation film and the electrode and in the central portion of said insulation film to form first and second barriers, respectively, which hinder diffusion of said p-type dopant from said electrode into said insulation film adjacent an interface between said insulation film and said silicon substrate;
- and
- wherein the insulating film is a lamp annealed thermal oxidation layer.
4 more elements
A semiconductor device comprising:
- a silicon substrate having a primary plane;
- a silicon oxide film formed on the primary plane of the silicon substrate;
- and
- an electrode formed on the oxidation film and having a p-type dopant included therein;
- wherein the silicon oxide film has a distribution of nitrogen concentration that peaks around a central portion of the silicon oxide film and near an interface between the silicon oxide film and the electrode to form first and second barriers, respectively, which hinder diffusion of said p-type dopant from said electrode into said silicon oxide film adjacent an interface between said silicon oxide film and said silicon substrate;
- and
- wherein the nitrogen concentration around the central portion of the silicon oxide film has a peak value of not higher than 2 atomic %.
4 more elements
Dependencies are inferred from the claim text.