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US 6,144,069 AGranted
LDMOS transistor
AssigneeUnited Microelectronics Corp.
InventorMing-Tsung Tung
Life of this patent
Estimating the term…
Abstract
A single side high voltage lateral diffused metal-oxide-semiconductor (LDMOS) transistor is disclosed. The drain side is low-voltage N-well with lower concentration to increase driving voltage while the source side is low-voltage P-well with higher concentration to increase the interior electric field such that the conductivity is improved and the threshold voltage is adjusted by high-voltage P-well with lower concentration.
Claims9
An LDMOS transistor, said transistor comprising:
- a substrate having a first conductivity type;
- a first high-voltage tank having a second conductivity type opposite that of said first conductivity type formed in a face of said substrate;
- a second high-voltage tank having said first conductivity type formed adjacent to and in contact with said first high-voltage tank, such that a major portion of the second high-voltage tank is not within the first high-voltage tank;
- a first low-voltage tank having said second conductivity type formed within a face of said first high-voltage tank, such that at least one trench isolation region is included within said first low-voltage tank;
- a second low-voltage tank having said first conductivity type formed within said second high-voltage tank, such that a channel region exists between said second low-voltage tank and said first low-voltage tank;
- a conductivity gate having portions formed over a portion of said first high-voltage tank, said second high-voltage tank, said first low-voltage tank, and said second low-voltage tank, and insulatively disposed thereon;
- and
- a first source/drain region in said first low-voltage tank and a second source/drain region in said second low-voltage tank adjacent opposite ends of said gate structure in said substrate.
5 more elements
A single side high voltage LDMOS transistor, said transistor comprising:
- a silicon layer having a first conductivity type;
- a first high-voltage tank having a second conductivity type opposite that of said first conductivity type formed in a face of said substrate;
- a second high-voltage tank having said first conductivity type formed adjacent to and in contact with said first high-voltage tank, such that a major portion of the second high-voltage tank is not within the first high-voltage tank;
- a first low-voltage tank having said second conductivity type formed within a face of said first high-voltage tank, such that at least one trench isolation region is included within said first low-voltage tank;
- a second low-voltage tank having said first conductivity type formed within said second high-voltage tank, such that a channel region exists between said second low-voltage tank and said first low-voltage tank;
- a conductivity gate having portions formed over a portion of said first high-voltage tank, said second high-voltage tank, said first low-voltage tank, and said second low-voltage tank, and insulatively disposed thereon;
- and
- a first source/drain region in said first low-voltage tank and a second source/drain region in said second low-voltage tank adjacent opposite ends of said gate structure in said substrate.
5 more elements
Dependencies are inferred from the claim text.