Layer structure having contact hole, method of producing the same, fin-shaped capacitor using the layer structure, method of producing the fin-shaped capacitor and dynamic random access memory having the fin-shaped capacitor

A dynamic random access memory comprising:

• a semiconductor substrate having a first diffusion region and a second diffusion region of a transfer transistor;
• a first insulating layer having a first contact hole exposing said first diffusion region, and a second contact hole exposing said second diffusion region;
• a word line covered by said first insulating layer;
• a stacked capacitor which is in contact with said first diffusion region through said first contact hole;
• a bit line which is in contact with said second diffusion region through said second contact hole;
• and
• a second insulating layer covering said stacked capacitor,
• said stacked capacitor including a storage electrode, a dielectric film and a cell plate, and
• said storage electrode which is in contact with said first diffusion region through said first contact hole having a plurality of first fin-shaped films located outside of said first contact hole, a second film connecting said first fin-shaped films to each other, and a third film extending on an uppermost one of said first fin-shaped films and said second film, substantially vertically extending in said first contact hole, and being in contact with said first diffusion region.

A dynamic random access memory comprising:

• a semiconductor substrate having a first diffusion region and a second diffusion region of a transfer transistor;
• a first insulating layer having a first contact hole exposing said first diffusion region, and a second contact hole exposing said second diffusion region;
• a word line covered by said first insulating layer;
• a stacked capacitor which is in contact with said first diffusion region through said first contact hole;
• a bit line which is in contact with said second diffusion region through said second contact hole;
• and
• a second insulating layer covering said stacked capacitor,
• said stacked capacitor including a storage electrode, a dielectric film and a cell plate, and
• said storage electrode which is in contact with said first diffusion region through said first contact hole having a plurality of first fin-shaped films located outside of said first contact hole, and a second film connecting said first fin-shaped films to each other, and extending on an uppermost one of said first fin-shaped films, said second film substantially vertically extending in said first contact hole, and being in contact with said first diffusion region.

A fin-shaped capacitor comprising:

• a storage electrode having an exposed surface;
• a dielectric film formed around said exposed surface of said storage electrode;
• and
• a cell plate covering said storage electrode surrounded by said dielectric film,
• said storage electrode being in contact with a diffusion region of a semiconductor substrate through a contact hole formed in an insulating layer formed on said semiconductor substrate,
• said storage electrode having a first fin having a first film, a second film and a third film,
• said first film having a first opening having a width greater than that of said contact hole,
• said second film being formed around an inner wall of said first film defining said first opening, so that a second opening defined by the second film, has a width substantially identical to that of said contact hole, and
• said third film extending on said second film and over said first film, substantially vertically extending in said first contact hole, and being in contact with said first diffusion region in said semiconductor substrate.

A fin-shaped capacitor comprising:

• a storage electrode having an exposed surface;
• a dielectric film formed around said exposed surface of said storage electrode;
• and
• a cell plate covering said storage electrode surrounded by said dielectric film,
• said storage electrode being in contact with a diffusion region of a semiconductor substrate through a contact hole formed in an insulating layer formed on said semiconductor substrate, and
• said storage electrode having a plurality of first fin-shaped films located outside of said contact hole, a second film connecting said first fin-shaped films to each other, and a third film extending on an uppermost one of said first fin-shaped films and said second film, substantially vertically extending in said contact hole, and being in contact with said diffusion region of said semiconductor substrate.

A fin-shaped capacitor comprising:

• a storage electrode having an exposed surface;
• a dielectric film formed around said exposed surface of said storage electrode;
• and
• a cell plate covering said storage electrode surrounded by said dielectric film,
• said storage electrode being in contact with a diffusion region of a semiconductor substrate through a contact hole formed in an insulating layer formed on said semiconductor substrate,
• said storage electrode having a plurality of first fin-shaped films located outside of said contact hole, and a second film connecting said first fin-shaped films to each other, and extending on an uppermost one of said first fin-shaped films, said second film substantially vertically extending in said contact hole, and being in contact with said diffusion region in said semiconductor substrate.

A dynamic random access memory comprising:

• a semiconductor substrate having a first diffusion region and a second diffusion region of a transfer transistor;
• a first insulating layer having a first contact hole exposing said first diffusion region, and a second contact hole exposing said second diffusion region;
• a word line covered by said first insulating layer;
• a stacked capacitor which is in contact with said first diffusion region through said first contact hole;
• a bit line which is in contact with said second diffusion region through said second contact hole;
• and
• a second insulating layer covering said stacked capacitor;
• said stacked capacitor including a storage electrode, a dielectric film and a cell plate,
• said storage electrode which is in contact with said first diffusion region through said first contact hole having a first film, a second film and a third film,
• said first film having a first opening having a width greater than that of said first contact hole,
• said second film serving as a sidewall being formed around an inner wall of said first film defining said first opening, so that a second opening defined by the second film has a width substantially identical to that of said first contact hole, and
• said third film extending on said second film and over said first film, substantially vertically extending in said first contact hole, and being in contact with said first diffusion region.

A storage electrode for an integrated circuit formed in a substrate, the storage electrode comprising:

• a first conductive film overlying the substrate and having a first opening formed by an inner surface of said first conductive film;
• a second conductive film having an outer surface contacting the inner surface of said first conductive film in the first opening and having an inner surface forming a second opening with a width less than the first opening;
• and
• a third conductive film extending over said first conductive film, contacting the inner surface of said second conductive film, and extending through the second opening to contact the substrate.