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US 6,144,052 AGranted
Semiconductor device and its manufacture
AssigneeHitachi, Ltd.
InventorsKeiko Kushida, Masahiko Hiratani, Kazuyoshi Torii, Shinichiro Takatani, Hiroshi Miki, Yuuichi Matsui, Yoshihisa Fujisaki
Life of this patent
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Abstract
An oriented polycrystal silicon film or an amorphous silicon film 52 is disposed on the whole area beneath a conductive diffusion barrier 61 under a lower electrode of a ferroelectric capacitor. As a result, the conductive diffusion barrier, the lower electrode and the capacitor ferroelectric film become oriented films; therefore, it is possible to reduce the signal variation in capacitors even in minute semiconductor devices, and obtain a highly reliable semiconductor device.
Claims42
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed over said semiconductor substrate;
- a ferroelectric capacitor formed over said insulating film and having a lower electrode and an upper electrode between which a ferroelectric film is sandwiched;
- an oriented semiconductor film formed on said insulating film;
- and
- a diffusion barrier formed on said oriented semiconductor film,
- wherein said lower electrode is formed on said diffusion barrier so that the whole under surface of said lower electrode is in contact with said diffusion barrier, and wherein the whole under surface of said diffusion barrier is in contact with said oriented semiconductor film such that the under surface of the diffusion barrier is not in direct contact with said insulating film.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed over said semiconductor substrate;
- a ferroelectric capacitor formed over said insulating film and having a lower electrode and an upper electrode between which a ferroelectric film is sandwiched;
- an amorphous semiconductor film formed on said insulating film;
- and
- a diffusion barrier is formed on said amorphous semiconductor film,
- wherein said lower electrode is formed on said diffusion barrier so that the whole under surface of said lower electrode is in contact with said diffusion barrier, and wherein the whole under surface of said diffusion barrier is in contact with said amorphous semiconductor film such that the under surface of said diffusion barrier is not in direct contact with the insulating film.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed over said semiconductor substrate;
- a dielectric capacitor formed over said insulating film and having a lower electrode and an upper electrode between which a ferroelectric film is sandwiched;
- and
- an oriented semiconductor film or an amorphous semiconductor film formed on said insulating film;
- wherein said insulating film and said lower electrode face each other across said oriented semiconductor film or said amorphous semiconductor film such that the whole under surface of said lower electrode is separated from said insulating film by said oriented semiconductor film or said amorphous semiconductor film.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a MIS transistor formed on the main surface of said semiconductor substrate, and having a gate electrode, a source area and drain area;
- an insulating film formed over said semiconductor substrate and said MIS transistor, and having a contact hole disposed above said source area or said drain area;
- a conductive film embedded in said contact hole, and electrically connected to said source area or said drain area;
- an oriented semiconductor film or an amorphous semiconductor film formed on said conductive film and on the upper surface of said insulating film;
- a diffusion barrier formed on said oriented semiconductor film or said amorphous semiconductor film;
- and
- a ferroelectric capacitor formed on said diffusion barrier, and having a first electrode, a second electrode disposed over said first electrode and a ferroelectric film disposed between said first electrode and said second electrode,
- wherein said first electrode is formed on said diffusion barrier, wherein the whole lower surface of said first electrode is opposite the upper surface of said oriented semiconductor film or said amorphous semiconductor film, and wherein the whole lower surface of said diffusion barrier is not in direct contact with said insulating film.
6 more elements
Dependencies are inferred from the claim text.