Gallium phosphide green light-emitting device
AssigneeShowa Denko K.K.
InventorsAtsushi Yoshinaga, Koichi Hasegawa
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Abstract
A GaP green light-emitting diode includes an n-type GaP single-crystal substrate on which is formed at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a nitrogen-doped p-type GaP layer. The concentration of carbon and/or sulfur in the nitrogen-doped n-type GaP layers is controlled to be not more than 6.times.10.sup.15 cm.sup.-3.
Claims8
A GaP green light-emitting diode comprising an n-type GaP single-crystal substrate, and at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer that are formed on the substrate in the order mentioned, wherein a concentration of carbon in the nitrogen-doped n-type GaP layer is not more than 6.times.10.sup.15 cm.sup.-3, and an acceptor concentration of the p-type GaP layer in physical contact with the nitrogen-doped n-type GaP layer is in the range of from 5.times.10.sup.17 cm.sup.-3 to 20.times.10.sup.17 cm.sup.-3.
A GaP green light-emitting diode comprising an n-type GaP single-crystal substrate, and at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer that are formed on the substrate in the order mentioned, wherein a concentration of sulfur in the nitrogen-doped n-type GaP layer is not more than 6.times.10.sup.15 cm.sup.-3, and an acceptor concentration of the p-type GaP layer in physical contact with the nitrogen-doped n-type GaP layer is in the range of from 5.times.10.sup.17 cm.sup.-3 to 20.times.10.sup.17 cm.sup.-3.
Dependencies are inferred from the claim text.