Light emitting semiconductor device having plural light emitting elements with different junction depth

A light emitting semiconductor device having a plurality of light emitting elements respectively emitting light of different wavelength, comprising:

• a semiconductor body having a first conductive-type domain and a plurality of individual second conductive-type domains;
• a first conductive electrode being in contact with said first conductive-type domain;
• and
• a plurality of second conductive electrodes being individually in contact with said plurality of second conductive-type domains,
• said semiconductor body being composed of a plurality of semiconductor layers each of which is a light emitting layer stacked on one another and comprising a stacked semiconductor layer partially forming said first conductive-type domain, said semiconductor body having a substantially planar upper surface,
• said second conductive-type domains being respectively formed from parts of the substantially planar upper surface of said semiconductor body and extending to said semiconductor layers, said second conductive-type domains having respectively different depths,
• said first conductive-type domain and said plurality of second conductive-type domains forming a plurality of pn junction interfaces,
• said semiconductor layers having energy band gaps different from one another and being stacked in increasing order of energy band gap from a lower side of said semiconductor body to the substantially planar upper surface, and
• one or more pn junction front portions being formed inside or on respective upper surfaces of said semiconductor layers.