Semiconductor device having an active layer with no grain boundary
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Akiharu Miyanaga, Satoshi Teramoto
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Abstract
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.
Claims26
A semiconductor device having an active region which comprises a region in which no grain boundary substantially exists wherein said region in which no grain boundary substantially exists comprises:
- hydrogen or halogen element which neutralizes a point defect at a density of 0.001 to 1 atm %, carbon and nitrogen atoms at a density of 1.times.10.sup.16 to 5.times.10.sup.18 atoms/cm.sup.3, oxygen atoms at a density of 1.times.10.sup.17 to 5.times.10.sup.19 atoms/cm.sup.3, and a metal element that promotes crystallization of said active region at a density smaller than 1.times.10.sup.19 atoms/cm.sup.3.
A semiconductor device, having an active region which includes a region defined as:
- having substantially no grain boundary;
- containing hydrogen or halogen element which neutralizes a point defect at a density of 0.001 to 1 atm %, carbon and nitrogen atoms at a density of 1.times.10.sup.16 to 5.times.10.sup.18 atoms/cm.sup.3, oxygen atoms at a density of 1.times.10.sup.17 to 5.times.10.sup.19 atoms/cm.sup.3, and a metal element that promotes crystallization of said region at a density smaller than 1.times.10.sup.19 atoms/cm.sup.3 ;
- and
- two of said semiconductor devices are constituted as one pair wherein at least a portion of a semiconductor layer between said two semiconductor devices is removed.
A semiconductor device comprising:
- at least two thin film transistors formed over an insulating substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors and a crystal axis of the crystalline semiconductor film in the other are identical or substantially identical.
A semiconductor device comprising:
- at least two thin film transistors formed over an insulating substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein and has a same rotating angle around a crystal axis thereof.
A semiconductor device comprising:
- at least two thin film transistors formed over an insulating substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein and has a same crystal axis and a same rotating angle around the crystal axis.
A semiconductor device comprising:
- at least one pair of n-channel and p-channel thin film transistors formed over an insulating substrate in a complementary configuration, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein and a crystal axis of said crystalline semiconductor film is identical or substantially identical in said thin film transistors.
A semiconductor device comprising:
- at least one pair of complementary n-channel and p-channel thin film transistors formed over an insulating substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein and has a same rotating angle around a crystal axis thereof.
A semiconductor device comprising:
- at least one pair of complementary n-channel and p-channel thin film transistors formed over an insulating substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed over said insulating substrate as an active region thereof,
- wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein and has a same crystal axis and a same rotating angle around the crystal axis.
Dependencies are inferred from the claim text.