Capacitor charging sensor
AssigneesInternational Business Machines Corporation, Alcedo
InventorsJames G. Ryan, Badih El-Kareh, Auguste B. El-Kareh
Life of this patent
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Abstract
A system for detecting charge accumulation during semiconductor wafer manufacturing including a sensor comprising a capacitor, an emitter for directing a primary electron beam toward the sensor, wherein the primary electron beam causes the sensor to emit secondary electrons and a detector for measuring the secondary electrons.
Claims20
A system for detecting charge accumulation during semiconductor wafer manufacturing comprising:
- a sensor comprising a capacitor;
- an emitter for directing a primary electron beam toward said sensor, wherein said primary electron beam causes said sensor to emit secondary electrons;
- and
- a detector for measuring said secondary electrons.
A system for detecting charge accumulation during semiconductor wafer manufacturing comprising;
- a sensor comprising a capacitor;
- an emitter for directing a primary electron beam toward said sensor, wherein said primary electron beam causes said sensor to emit secondary electrons;
- and
- a detector for measuring said secondary electrons,
- wherein said capacitor comprises a trench capacitor and includes:
- a substrate;
- a trench within said substrate;
- a first dielectric lining said trench;
- an inner plate over said first dielectric and filling said trench;
- and
- a second dielectric covering said substrate, wherein said inner plate extends through said second dielectric.
A system for detecting charge accumulation during semiconductor wafer manufacturing comprising:
- a sensor comprising a capacitor;
- an emitter for directing a primary electron beam toward said sensor, wherein said primary electron beam causes said sensor to emit secondary electrons;
- and
- a detector for measuring said secondary electrons,
- wherein said capacitor comprises a trench capacitor and includes:
- a substrate;
- a first dielectric over said substrate;
- a first conductive layer over said first dielectric;
- a second dielectric layer over said first conductive layer;
- and
- a second conductive layer over said second dielectric layer.
A method for sensing charge accumulation on semiconductor wafers during production comprising:
- positioning a sensor in a semiconductor wafer production chamber;
- initiating a manufacturing process in said chamber;
- directing a primary beam of electrons at said sensor during said manufacturing process, wherein said primary beam causes said sensor to emit secondary electrons;
- and
- measuring said secondary electrons emitted by said sensor.
A method for sensing charge accumulation on semiconductor wafers during production comprising:
- positioning a sensor in a semiconductor wafer production chamber;
- initiating a manufacturing process in said chamber;
- directing a primary beam of electrons at said sensor during said manufacturing process, wherein said primary beam causes said sensor to emit secondary electrons;
- and
- measuring said secondary electrons emitted by said sensor,
- wherein said step of positioning said sensor comprises a step of positioning, in said chamber, a trench capacitor comprising:
- a substrate;
- a trench within said substrate;
- a first dielectric lining said trench;
- an inner plate over said dielectric and filling said trench;
- a second dielectric covering said substrate, wherein said inner plate extends through said second dielectric.
A method for sensing charge accumulation on semiconductor wafers during production comprising:
- positioning a sensor in a semiconductor wafer production chamber;
- initiating a manufacturing process in said chamber;
- directing a primary beam of electrons at said sensor during said manufacturing process, wherein said primary beam causes said sensor to emit secondary electrons;
- and
- measuring said secondary electrons emitted by said sensor, wherein said step of positioning said sensor comprises a step of positioning in said chamber, a stacked capacitor comprising:
- a substrate;
- a first dielectric over said substrate;
- a first conductive layer over said first dielectric;
- a second dielectric layer over said first conductive layer;
- and
- a second conductive layer over said second dielectric layer.
Dependencies are inferred from the claim text.