Method to improve adhesion between low dielectric constant layer and silicon containing dielectric layer

A method of forming a composite dielectric layer, comprising the steps:

• providing a substrate;
• forming a SiON dielectric material layer over the substrate;
• forming an organic polymer SOP dielectric material layer continuously and contiguously over the SiON layer;
• and
• forming a SiON dielectric material cap layer over the SOP layer.

A method of forming a composite dielectric layer, comprising the steps:

• providing a substrate;
• forming a silicon oxide layer over the substrate;
• forming an organic polymer SOP dielectric material layer continuously and contiguously over the silicon oxide layer;
• performing a nitrogen implant through the organic polymer SOP dielectric material layer and into the silicon oxide layer to form a SiON dielectric material layer from a portion of the silicon oxide layer, the SiON dielectric material layer being adjacent the organic polymer SOP dielectric material layer;
• forming a SiON dielectric material cap layer over the SOP layer.

A method of forming a composite dielectric layer, comprising the steps:

• providing a substrate;
• forming a SiON dielectric material layer over the substrate;
• forming an organic polymer SOP dielectric material layer continuously and contiguously over the SiON dielectric material layer;
• forming a silicon oxide layer over the organic polymer SOP dielectric material layer;
• and
• performing a nitrogen implant into a portion of the silicon oxide layer adjacent the organic polymer SOP dielectric material layer to form a SiON dielectric material cap layer from the portion of the silicon oxide layer adjacent the organic polymer SOP dielectric material layer.