Chemical mechanical polishing composition and method of polishing a substrate
AssigneeRodel Holdings, Inc.
InventorsRobert L. Rhoades, Robert C. Roberts, Paul J. Yancey
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Abstract
The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.
Claims9
A chemical mechanical polishing method for the planarization of integrated circuit structures comprising the steps of:
- (a) providing a substrate having a plurality of patterned regions;
- and
- (b) polishing the substrate with a chemical mechanical polishing slurry comprising an aqueous liquid carrier and abrasive particles consisting essentially of (1) small abrasive particles having a mean diameter of between about 2 and 30 nm and (2) large abrasive particles having a mean diameter between 2 and 10 times larger than the mean diameter of the small abrasive particles;
- wherein said polishing step comprises polishing the substrate with a slurry having a volume ratio of small abrasive particles to large abrasive particles between 5:1 and 100:1.
Dependencies are inferred from the claim text.