Method of processing semiconductor device with laser

A method of producing a semiconductor device comprising:

• emitting a laser light from one laser oscillator;
• dividing said laser light into two laser lights;
• passing one of said two laser lights through a first optical system;
• passing the other of said two laser lights through a second optical system;
• first irradiating said one of said two laser lights to a semiconductor film after passing said one of said two laser lights through said first optical system;
• and
• second irradiating the other of said two laser lights to said semiconductor film after said first irradiating of said one of said two laser lights and after passing the other of said two laser lights through said second optical system,
• wherein said first irradiating of said one of said two laser lights improves crystallinity of said semiconductor film, and
• wherein said second irradiating of the other of said two laser lights improves crystallinity of said semiconductor film.

A method of producing a semiconductor device comprising:

• emitting a laser light from one laser oscillator;
• dividing said laser light into two laser lights;
• passing one of said two laser lights through a first optical system;
• passing the other of said two laser lights through a second optical system;
• first irradiating said one of said two laser lights to a semiconductor film after passing said one of said two laser lights through said first optical system;
• and
• second irradiating the other of said two laser lights to said semiconductor film after said first irradiating of said one of said two laser lights and after passing the other of said two laser lights through said second optical system,
• wherein said first irradiating of said one of said two laser lights improves crystallinity of said semiconductor film,
• wherein said second irradiating of the other of said two laser lights improves crystallinity of said semiconductor film, and
• wherein energy density of the other of said two laser lights is more than 1.3 times as large as energy density of said one of said two laser lights.

A method of producing a semiconductor device comprising:

• emitting a laser light from one laser oscillator;
• dividing said laser light into two laser lights;
• passing one of said two laser lights through a first optical system;
• passing the other of said two laser lights through a second optical system;
• first irradiating said one of said two laser lights to a semiconductor film in a first chamber after passing said one of said two laser lights through said first optical system;
• and
• second irradiating the other of said two laser lights to said semiconductor film in a second chamber after said first irradiating of said one of said two laser lights and after passing the other of said two laser lights through said second optical system,
• wherein said first irradiating of said one of said two laser lights improves crystallinity of said semiconductor film, and
• wherein said second irradiating of the other of said two laser lights improves crystallinity of said semiconductor film.

A method of producing a semiconductor device comprising:

• emitting a laser light from one laser oscillator;
• dividing said laser light into two laser lights;
• passing one of said two laser lights through a first optical system;
• passing the other of said two laser lights rough a second optical system,
• first irradiating said one of said two laser lights to a semiconductor film in a vacuum in a first chamber after passing said one of said two laser lights through said first optical system;
• and
• second irradiating the other of said two laser lights to said semiconductor film in air in a second chamber after said first irradiating of said one of said two laser lights after passing the other of said two laser lights through said second optical system,
• wherein said first irradiating of said one of said two laser lights improves crystallinity of said semiconductor film, and
• wherein said second irradiating of the other of said two laser lights improves crystallinity of said semiconductor film.