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US 6,143,650 AGranted
Semiconductor interconnect interface processing by pulse laser anneal
AssigneeAdvanced Micro Devices, Inc.
InventorsShekhar Pramanick, Dirk Brown, Takeshi Nogami
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Abstract
A method is provided for forming tantalum/copper barrier/seed layers in semiconductor channels or vias by using a pulsed laser annealing step. The pulsed laser can be controlled to heat the copper seed material for such short periods of time that the copper seed material does not agglomerate but the temperature is high enough to form an intermixed layer with the tantalum.
Claims12
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor with a dielectric layer formed thereon;
- forming an opening in said dielectric layer, said opening defined by walls of said dielectric layer;
- forming an adhesion/barrier layer to line said dielectric layer in said opening;
- forming a seed layer to line said adhesion/barrier layer;
- and
- laser annealing said seed layer whereby said seed layer and adhesion/barrier layer intermix.
3 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor with a dielectric layer formed thereon;
- forming an opening in said dielectric layer, said opening defined by walls of said dielectric layer;
- depositing a tantalum layer to line said dielectric layer in said opening;
- depositing a copper layer to line said tantalum layer;
- and
- laser annealing said copper layer whereby said copper layer and tantalum layer intermix.
3 more elements
Dependencies are inferred from the claim text.