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US 6,143,643 AGranted
Process for manufacture of integrated circuit device using organosilicate insulative matrices
AssigneeInternational Business Machines Corporation
InventorsKenneth Raymond Carter, Craig Jon Hawker, James Lupton Hedrick, Victor YeeWay Lee, Robert Dennis Miller, Willi Volksen, Do Yeung Yoon
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Abstract
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
Claims20
A process for forming an integrated circuit comprising:
- (a) positioning a layer of a dielectric composition, said composition comprising a decomposable linear polymer having a number average molecular weight in the range of between 1,000 and 100,000 and an organic polysilica on a substrate;
- (b) heating said composition to condense said polysilica;
- (c) decomposing said decomposable linear polymer;
- (d) lithographically patterning said layer of said dielectric composition;
- (e) depositing a metallic film onto said patterned dielectric layer;
- and
- (f) planarizing said film to form an integrated circuit.
4 more elements
A process for forming an integrated circuit comprising:
- (a) depositing a metallic film on a substrate;
- (b) lithographically patterning said metallic film;
- (c) depositing a layer of a dielectric composition comprising a decomposable linear polymer having a number average molecular weight in the range of between 1,000 and 100,000 and an organic polysilica on said patterned metallic film;
- (d) heating said composition to condense said polysilica;
- and
- (e) decomposing said decomposable linear polymer.
3 more elements
Dependencies are inferred from the claim text.