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US 6,143,634 AGranted
Semiconductor process with deuterium predominance at high temperature
AssigneeTexas Instruments Incorporated
InventorsRobert M. Wallace, Peijun Chen
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Abstract
Channel-hot-carrier reliability can be improved by deuterium passivation of the gate interface. By performing high temperature steps (above 300 degrees Celsius) in a deuterium-containing ambient, harmful depletion of deuterium due to diffusion away from the gate interface is avoided.
Claims13
An integrated circuit fabrication method, comprising the steps of:
- (a.) fabricating an active semiconductor device structure including a conductive gate material on a gate dielectric;
- and
- (b.) after said step (a.), completing fabrication of an integrated circuit including multiple levels of interconnects;
- (c.)wherein said step (b.) includes a plurality of sub-steps which are each performed in a respective non-oxidizing ambient above a predetermined temperature which is greater than 250 degrees Celsius;
- (d.) and wherein the compositions of all of said respective ambients include at least 1% atomic of deuterium.
2 more elements
Dependencies are inferred from the claim text.