MOS semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, comprising:

• (a) forming a gate insulating layer on a semiconductor substrate having first conductivity;
• (b) forming a gate electrode on said gate insulating layer;
• (c) implanting impurities into said semiconductor substrate with said gate electrode working as a mask, said impurities having second conductivity;
• (d) forming an interlayer insulating layer having substantially no moisture content over said gate electrode and said semiconductor substrate;
• and
• (e) introducing a material for trapping moisture into said interlayer insulating layer.

A method of fabricating a semiconductor device, comprising:

• (a) forming a gate insulating layer on a semiconductor substrate having first conductivity;
• (b) forming a gate electrode on said gate insulating layer;
• (c) implanting impurities into said semiconductor substrate with said gate electrode working as a mask, said impurities having second conductivity;
• (d) forming an interlayer insulating layer having substantially no hydroxyl content over said gate electrode and said semiconductor substrate;
• and
• (e) introducing a material for trapping hydroxyl groups into said interlayer insulating layer.

A method of fabricating a semiconductor device, comprising:

• (a) forming a gate insulating layer on a semiconductor substrate having first conductivity;
• (b) forming a gate electrode on said gate insulating layer;
• (c) implanting impurities into said semiconductor substrate with said gate electrode working as a mask to form respective source and drain regions, said impurities having second conductivity;
• and
• (d) introducing nitrogen into an interlayer insulating layer to form a nitrogen containing interlayer insulating layer to completely cover said gate electrode and said source and drain regions of said semiconductor substrate.