Method of manufacturing solid state image sensing device
AssigneeNEC Corporation
InventorsKeisuke Hatano, Yasutaka Nakashiba
Life of this patent
Estimating the term…
Abstract
A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p.sup.+ -type semiconductor region and an insulating film with a relatively large thickness formed on the first p.sup.+ -type semiconductor region. The cell area further includes a second p.sup.+ -type semiconductor region and an insulating film with a relatively small thickness formed on the second p.sup.+ -type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.
Claims6
A method of producing a solid state sensing device, said solid state image sensing device comprising a cell area located at a semiconductor substrate and a peripheral circuit area formed around the cell area located at the semiconductor substrate, said cell area including photoelectric conversion portions and charge transfer portions, said method comprising the steps of:
- forming said peripheral circuit area, said step of forming the peripheral circuit area including the steps of forming a first device isolation region and forming an insulating film on said first device isolation region;
- forming said cell area, said step of forming the cell area including the steps of forming a second device isolation region for making isolation between said photoelectric conversion portions themselves, between said photoelectric conversion portions and said charge transfer portions, and between said charge transfer portions themselves and forming an insulating film on said second device isolation region;
- wherein said insulating film of said peripheral circuit area is formed to have a thickness greater than the thickness of said insulating film of said cell area and is formed using a CVD process.
Dependencies are inferred from the claim text.