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AssigneeDenso Corporation
InventorsTsuyoshi Fukada, Masakazu Kanosue, Kenichi Ao, Minoru Murata, Seiichiro Ishio
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A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabrication of a semiconductor sensor comprising:
A method for fabricating a semiconductor sensor, the method comprising:
Dependencies are inferred from the claim text.
This application is based upon and claims priority from Japanese Patent Application Nos. Hei 9-200179 filed on Jul. 25, 1997, and Hei 9-225175 filed on Aug. 21, 1997, the contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a method for fabrication of a semiconductor sensor including a gauge resistor.
Other features and advantages of the present invention will be appreciated, as well as method of operation and the function of the related parts, from a study of the following detailed description, the appended claims, and the drawings, all of which form a part of this application. In the drawings:
FIG. 1 is a plan view of a semiconductor acceleration sensor of a first embodiment of the present invention;
FIG. 2 is a II--II cross sectional view of the semiconductor acceleration sensor shown in FIG. 1;
Preferred embodiments of the present invention are now described in detail with reference to drawings.
(First Embodiment)
In this embodiment, the present invention is embodied as a semiconductor acceleration sensor. As shown in FIGS. 1 and 2, an N-type single crystal silicon substrate (chip) 1 has through holes 2, 3, 4 and 5. Holes 2, 3, 4 and 5 define a square frame portion 6, a mass portion 7 and beam portions 8, 9, 10 and 11. The square frame portion 6 and the mass portion 7 are thick; the beam portions 8, 9, 10 and 11 are thin. The mass portion 7 is suspended inside the square frame portion 6 by the beam portions 8, 9, 10 and 11. The beam portions 8, 9, 10 and 11 are distorted when the mass portion 7 is accelerated. The N-type single crystal silicon substrate 1 is connected on a pedestal 27.
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By alteration of electrical resistance: by piezo-resistive elements, e.g. semiconductor strain gauges
By alteration of electrical resistance: by semiconductor devices comprising at least one PN junction, e.g. transistors
Measuring linear or angular speed, acceleration, deceleration, or shock
Term ended 24 Jul 2018 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.