Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas

A method for use in a dissolved wafer process for forming a micro-electromechanical device, wherein said method comprises the steps of:

• providing a partially sacrificial substrate having a first surface;
• doping a portion of said partially sacrificial substrate with a dopant such that said partially sacrificial substrate includes a doped region and an undoped region, wherein the doped region is adjacent the first surface of said partially sacrificial substrate;
• etching selected regions of said doped and undoped regions of said partially sacrificial substrate, wherein the remaining doped regions of said partially sacrificial substrate form members of the resulting microelectromechanical device;
• providing a support substrate for supporting said partially sacrificial substrate;
• forming at least one mesa on a respective surface of said support substrate such that said at least one mesa extends outwardly from the respective surface;
• bonding said first surface of said partially sacrificial substrate to said at least one mesa such that the first surface of said partially sacrificial substrate is suspended above the remainder of the respective surface of said support substrate with the doped region of said partially sacrificial substrate in a facing relationship thereto;
• and
• dissolving said undoped region from said partially sacrificial substrate such that at least one of said members of the resulting microelectromechanical device defined by said doped region of said partially sacrificial substrate is moveable in relation to said support substrate.