Polyimide precursor, polyimide and their use
AssigneeHitachi Chemical Company, Ltd.
InventorsHideo Hagiwara, Yasunori Kojima, Makoto Kaji, Mitsumasa Kojima, Haruhiko Kikkawa
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Abstract
A polyimide precursor having repeating units of the formula: ##STR1## wherein R.sup.1 is a tetravalent organic group; and R.sup.2 is a divalent diphenyl group, is excellent in image formation and particularly suitable for forming a pattern using an i-line stepper, and gives a photosensitive resin composition by imparting photosensitivity to the polyimide precursor, said photosensitive resin composition being suitable for forming surface protective films for semiconductor devices or interlaminar insulating films for multilayer wiring boards.
Claims22
A process for producing a semiconductor device, which comprises:
- (a) forming a polyimide precursor film on a substrate using a photosensitive resin composition comprising a photosensitive polyamide resin which is obtained by imparting photosensitivity to a polyimide precursor having repeating units of the formula:
- ##STR23## wherein R.sup.1 is a tetravalent organic group;
- and R.sup.2 is a group of the formula:
- ##STR24## wherein R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are independently a hydrogen atom or a monovalent organic group, and at least two of R.sup.3 to R.sup.6 are independently a monovalent organic group;
- (b) setting up a mask having a pattern on a polyimide precursor film;
- (c) exposing the polyimide precursor film to monochromatic light of i-line having a wavelength of 365 nm, using an i-line stepper, through the mask;
- (d) forming a polyimide precursor pattern by removing unexposed portions of the polyimide precursor film, followed by heating for imidization to make a polyimide pattern;
- and
- (e) conducting passivation processing applying dry etching using the polyimide pattern as a mask.
A process for producing a relief pattern, which comprises:
- (a) forming a polyimide precursor film on a substrate using a photosensitive resin composition comprising a photosensitive polyamide resin which is obtained by imparting photosensitivity to a polyimide precursor having repeating units of the formula:
- ##STR28## wherein R.sup.1 is a tetravalent organic group;
- and R.sup.2 is a group of the formula:
- ##STR29## wherein R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are independently a hydrogen atom or a monovalent organic group, and at least two of R.sup.3 to R.sup.6 are independently a monovalent organic group;
- (b) setting up a mask having a pattern on a polyimide precursor film;
- (c) exposing the polyimide precursor film to monochromatic light of i-line having a wavelength of 365 nm, using an i-line stepper, through the mask;
- and
- (d) forming a polyimide precursor pattern by removing unexposed portions of the polyimide precursor film, followed by heating for imidization to make a polyimide pattern.
Dependencies are inferred from the claim text.