Optical information recording medium and optical recording method

An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, wherein the phase-change type optical recording layer has a composition of Zn.sub..gamma.2 In.sub..delta.2 Ma.sub..epsilon.2 Sb.sub..zeta.2 Te.sub..omega.2, where Ma is at least one member selected from Sn, Ge, Si and Pb, 0.01.ltoreq..gamma.2.ltoreq.0.1, 0.001.ltoreq..delta.2.ltoreq.0.1, 0.01.ltoreq..epsilon.2.ltoreq.0.1, 0.5.ltoreq..zeta.2.ltoreq.0.7, 0.25.ltoreq..omega.2.ltoreq.0.4, 0.03.ltoreq..delta.2+.epsilon.2.ltoreq.0.15, and .gamma.2+.delta.2+.epsilon.2+.zeta.2+.omega.2=1, whereby overwrite recording is carried out by modulation of light intensity of at least strong and weak two levels, so that a crystalline state is an unrecorded state, and an amorphous state is a recorded state.

An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, for overwrite recording by modulation of light intensity of at least two levels, so that a crystalline state is an unrecorded state, and an amorphous state is a recorded state, wherein the phase-change type optical recording layer has a composition of Ag.sub.z Ge.sub.y (Sb.sub.x Te.sub.1-x).sub.1-y-z, where 0.65.ltoreq.x.ltoreq.0.85, 0.01.ltoreq.y.ltoreq.0.20, and 0.01.ltoreq.z.ltoreq.0.15, and comprises, as the main component, an SbTe alloy of the SbTe eutectic composition or a composition including an excess amount of Sb over the SbTe eutectic composition.