Chemically amplified photoresist composition
AssigneeSamsung Electronics Co., Ltd.
InventorSang-jun Choi
Life of this patent
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Abstract
A chemically amplified photoresist composition, having a large etching resistance and excellent adhesion and contrast characteristics, includes a polymer represented by formula (1): ##STR1## wherein R.sub.1 is hydrogen, --OH, --COOH, or aliphatic hydrocarbon having a C.sub.1 -C.sub.20 polar functional group, R.sub.2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group, l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.
Claims5
A chemically amplified photoresist composition comprising:
- a photosensitive polymer represented by formula (1) ##STR9## and a photoacid generator in a range from about 1% to about 15% by weight based on the weight of the photosensitive polymer, wherein
- R.sub.1 is hydrogen, --OH, --COOH, or aliphatic hydrocarbon having a C.sub.1 -C.sub.20 polar functional group,
- R.sub.2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group,
- l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and
- the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.
Dependencies are inferred from the claim text.