Process of forming a refractory metal thin film
AssigneeSony Corporation
InventorTakaaki Miyamoto
Life of this patent
Estimating the term…
Abstract
A process for forming a refractory metal thin film on a substrate by subjecting a gaseous mixture containing a halide of a refractory metal and the hydrogen gas to a plasma chemical vapor deposition, comprising the step of adjusting a mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively small value at an initial stage of the process and, subsequent to the initial stage of the process, adjusting the mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively large value.
Claims14
A process of forming a refractory metal thin film on a substrate, comprising the steps of
- preliminarily removing a native oxide film on said substrate;
- nitriding a surface of said substrate, while preventing said substrate from coming into contact with an ambient atmosphere, by using a gas which comprises a nitrogen-containing molecule different from a molecule used in said removing a native oxide film;
- and
- subjecting a gaseous mixture containing a halide of a refractory metal and a hydrogen gas to a plasma chemical vapor deposition to deposit said refractory metal thin film on said substrate,
- wherein said substrate forms a bottom surface of a contact hole, said contact hole formed through an interlevel insulator film layer formed on said substrate.
A process of forming a refractory metal thin film on a substrate, comprising the steps of:
- preliminarily removing a native oxide film on said substrate;
- nitriding an outermost portion of said surface of said substrate, to form a Si.sub.3 N.sub.4 film layer on said substrate, while preventing said substrate from coming into contact with an ambient atmosphere, by using a gas which comprises a nitrogen-containing molecule different from a molecule used in said removing a native oxide film;
- subjecting a gaseous mixture containing a halide of a refractory metal and a hydrogen gas to a plasma chemical vapor deposition to deposit said refractory metal thin film on said substrate;
- and
- reacting said Si.sub.3 N.sub.4 film layer with an innermost portion of said refractory metal thin film,
- wherein said reacting said Si.sub.3 N.sub.4 film layer with an innermost portion of said refractory metal thin film is performed by use of a heat treatment.
Dependencies are inferred from the claim text.