Chemical vapor deposition of titanium
AssigneeMicron Technology, Inc.
InventorsGurtej Singh Sandhu, Donald L. Westmoreland
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Abstract
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
Claims38
A method for forming a titanium layer supported by a substrate, comprising:
- forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent;
- and
- forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer;
- wherein forming a seed layer comprises forming a zinc seed layer in accordance with the following chemical process (I):
- ZnR.sub.2 +H.sub.2 (gas).fwdarw.Zn+alkanes, (I)
- wherein R is an alkyl group.
A method for forming a titanium layer supported by a substrate, comprising:
- forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent;
- and
- forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer;
- wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II):
- TiCl.sub.4 +Zn.fwdarw.Ti+ZnCl.sub.2. (II)
A method for forming a titanium layer on an integrated circuit, comprising:
- forming a seed layer on the integrated circuit by combining a first precursor with a reducing agent with chemical vapor deposition (CVD);
- forming the titanium layer on the integrated circuit by combining the seed layer with a second precursor with CVD;
- wherein the seed layer is zinc, and formed according to the following chemical process (I):
- ZnR.sub.2 (gas)+H.sub.2 (gas).fwdarw.Zn(solid)+alkanes(gas),(I)
- wherein R is an alkyl group and chemical process (I) is performed at a temperature greater than 400 degrees Celsius;
- and
- wherein the titanium layer is formed according to the following chemical process (II):
- TiCl.sub.4 (gas)+Zn(solid).fwdarw.Ti(solid)+ZnCl.sub.2 (gas),(II)
- wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
A chemical vapor deposition method of providing a conformal layer of titanium on an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising:
- mounting an integrated circuit in the CVD reactor;
- injecting a first precursor and reducing agent in the CVD reactor;
- forming zinc on the integrated circuit;
- injecting a second precursor in the CVD reactor;
- and
- forming the titanium layer on the integrated circuit.
A method for forming a titanium layer supported by a substrate, comprising forming the titanium layer according to the following chemical process (III):
- TiCl.sub.4 +Zn(source).fwdarw.Ti+ZnCl.sub.2. (III)
- 25.
A method for forming a titanium layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- and
- forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer.
A method for forming a titanium silicide layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer;
- and
- annealing the titanium layer to form titanium silicide.
A method for forming a titanium layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- and
- forming the titanium layer supported by the substrate by combining TiCl.sub.4 with the seed layer.
A method for forming a titanium silicide layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- forming the titanium layer supported by the substrate by combining TiCl.sub.4 with the seed layer;
- and
- annealing the titanium layer to form titanium silicide.
A method for forming a titanium alloy layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- and
- forming the titanium alloy layer supported by the substrate by combining a titanium-containing precursor with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
A method for forming a titanium alloy layer supported by a substrate, comprising:
- forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR.sub.2, where R is an alkyl group, with hydrogen;
- and
- forming the titanium layer supported by the substrate by combining TiCl.sub.4 with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
Dependencies are inferred from the claim text.