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US 6,143,192 AGranted
Ruthenium and ruthenium dioxide removal method and material
AssigneeMicron Technology, Inc.
InventorDonald L. Westmoreland
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AssigneeMicron Technology, Inc.
InventorDonald L. Westmoreland
Estimating the term…
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
A method for removing at least a portion of a structure comprising ruthenium, the method comprising contacting the structure with a material comprising ceric ammonium nitrate.
A method for removing at least a portion of a ruthenium metal structure, the method comprising contacting at least a region of a surface of the ruthenium metal structure with a solution comprising ceric ammonium nitrate.
A method for removing at least a portion of an amorphous ruthenium dioxide layer, the method comprising contacting at least a region of a surface of the ruthenium dioxide layer with a liquid comprising ceric ammonium nitrate.
A method of etching at least a region of a structure comprising ruthenium, the method comprising subjecting at least a region of a surface of the structure to a solution comprising ceric ammonium nitrate, acetic acid, and water.
A method for patterning a ruthenium metal structure, the method comprising contacting at least a region of a surface of the structure with an aqueous solution comprising ceric ammonium nitrate.
A method for forming a structure on a substrate, the method comprising:
A method for forming a structure on a substrate, the method comprising:
A method for forming a device, the method comprising:
A method for forming a device, the method comprising:
A method for removing an amount of ruthenium metal from a structure consisting of ruthenium metal, the method comprising contacting at least a region of a surface of the structure with a solution consisting of 30 weight percent ceric ammonium nitrate, 10 weight percent acetic acid, and 60 weight percent water.
A method for removing an amount of amorphous ruthenium dioxide from a structure consisting of amorphous ruthenium dioxide, the method comprising contacting at least a region of a surface of the structure with a solution consisting of 30 weight percent ceric ammonium nitrate, 10 weight percent acetic acid, and 60 weight percent water.
A method for removing a deposit of a material selected from ruthenium metal, ruthenium dioxide, and a combination of ruthenium metal and ruthenium dioxide from a surface of an object, the method comprising immersing at least a portion of the object in a solution comprising about 0.5 weight percent to about 70 weight percent ceric ammonium nitrate.
Dependencies are inferred from the claim text.